M
Marco G. Pala
Researcher at Université Paris-Saclay
Publications - 122
Citations - 2232
Marco G. Pala is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Nanowire & Quantum tunnelling. The author has an hindex of 27, co-authored 111 publications receiving 1978 citations. Previous affiliations of Marco G. Pala include University of Pisa & Centre national de la recherche scientifique.
Papers
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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
TL;DR: In this article, the authors investigated the electrical performance improvements induced by appropriate strain conditions in n-type InAs tunnel FETs in the context of a systematic comparison with strained silicon MOSFETs.
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Spin-orbit coupling and phase coherence in InAs nanowires
S. Estevez Hernandez,Masashi Akabori,K. Sladek,Ch. Volk,S. Alagha,Hilde Hardtdegen,Marco G. Pala,N. Demarina,Detlev Grützmacher,Th. Schäpers +9 more
TL;DR: In this paper, the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy was investigated, and the phase-coherence length was determined.
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Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs
Marco G. Pala,David Esseni +1 more
TL;DR: In this article, the influence of interface traps on the I-V characteristics of InAs nanowire tunnel-field effect transistors and MOSFETs is investigated.
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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
Hermann Sellier,Benoît Hackens,Marco G. Pala,Frederico Rodrigues Martins,Samuel E. Baltazar,Xavier Wallart,Ludovic Desplanque,Vincent Bayot,Vincent Bayot,Serge Huant +9 more
TL;DR: In this article, a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures is presented, including a selection of its successful achievements found in the literature.
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Superconducting proximity effect in interacting double-dot systems
TL;DR: In this paper, a double quantum dot with large on-site Coulomb repulsion to two normal leads was studied and it was shown that for a large bias voltage of certain polarity, transport is blocked by populating the double dot with states whose spin symmetry is incompatible with the superconductor.