Showing papers by "Mark A. Eriksson published in 2015"
TL;DR: The qubit operation is characterized using two tomographic approaches: standard process tomography and gate set tomography, and both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.
Abstract: An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. This qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the 'sweet spot'. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.
157 citations
TL;DR: In this article, the authors implemented single qubit operations on a semiconductor hybrid qubit hosted in a three-electron Si/SiGe double quantum dot structure and achieved fast (>100 MHz) Rabi oscillations and purely electrical manipulations of the threeelectron spin states.
Abstract: We implement resonant single qubit operations on a semiconductor hybrid qubit hosted in a three-electron Si/SiGe double quantum dot structure. By resonantly modulating the double dot energy detuning and employing electron tunnelling-based readout, we achieve fast (>100 MHz) Rabi oscillations and purely electrical manipulations of the three-electron spin states. We demonstrate universal single qubit gates using a Ramsey pulse sequence as well as microwave phase control, the latter of which shows control of an arbitrary rotation axis on the X–Y plane of the Bloch sphere. Quantum process tomography yields π rotation gate fidelities higher than 93 (96)% around the X (Z) axis of the Bloch sphere. We further show that the implementation of dynamic decoupling sequences on the hybrid qubit enables coherence times longer than 150 ns. Researchers in the USA demonstrate a new technique using microwaves to manipulate three-electron spin qubits in silicon-based quantum dots. Mark Eriksson at the University of Wisconsin–Madison and colleagues have shown that in these double dot qubits, the transition between three-electron states—and therefore the properties of the electron spins—can be controlled by microwave electric fields. This finding offers a potential solution to the limitations associated with controlling spins in quantum dot systems, such as losses or the decay of the coherent spin states. By applying microwave bursts to these coupled quantum dot structures, Eriksson's team achieved rotation gate fidelities higher than 93%, demonstrating the technological potential of these qubits.
97 citations
TL;DR: In this paper, the first microwave-driven gate operations of a quantum dot hybrid qubit with high gate fidelity of 93 (96) % have been performed, achieving a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis.
Abstract: Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform the first microwave-driven gate operations of a quantum dot hybrid qubit, avoiding entirely the regime in which it is most sensitive to charge noise. Resonant detuning modulation along with phase control of the microwaves enables a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis with high fidelities > 93 (96) %. We also implement Hahn echo and Carr-Purcell (CP) dynamic decoupling sequences with which we demonstrate a coherence time of over 150 ns. We further discuss a pathway to improve gate fidelity to above 99 %, exceeding the threshold for surface code based quantum error correction.
60 citations
TL;DR: Measurements of the interfacial thermal resistance between mechanically joined single crystals of silicon demonstrate that van der Waals interfaces can have very low thermal resistance, with important implications for membrane-based micro- and nanoelectronics.
Abstract: We report measurements of the interfacial thermal resistance between mechanically joined single crystals of silicon, the results of which are up to a factor of 5 times lower than any previously reported thermal resistances of mechanically created interfaces. Detailed characterization of the interfaces is presented, as well as a theoretical model incorporating the critical properties determining the interfacial thermal resistance in the experiments. The results demonstrate that van der Waals interfaces can have very low thermal resistance, with important implications for membrane-based micro- and nanoelectronics.
38 citations
TL;DR: Combined with the lower demands on microwave circuitry when operating at half the qubit frequency, these observations indicate that second-harmonic driving can be a useful technique for future quantum computation architectures.
Abstract: We demonstrate coherent driving of a single electron spin using second-harmonic excitation in a Si/SiGe quantum dot. Our estimates suggest that the anharmonic dot confining potential combined with a gradient in the transverse magnetic field dominates the second-harmonic response. As expected, the Rabi frequency depends quadratically on the driving amplitude, and the periodicity with respect to the phase of the drive is twice that of the fundamental harmonic. The maximum Rabi frequency observed for the second harmonic is just a factor of 2 lower than that achieved for the first harmonic when driving at the same power. Combined with the lower demands on microwave circuitry when operating at half the qubit frequency, these observations indicate that second-harmonic driving can be a useful technique for future quantum computation architectures.
35 citations
TL;DR: In this paper, the authors proposed an optimized set of quantum gates for a singlet-triplet qubit in a double quantum dot with two electrons utilizing the subspace of the magnetic field.
Abstract: We propose an optimized set of quantum gates for a singlet-triplet qubit in a double quantum dot with two electrons utilizing the $S\text{\ensuremath{-}}{T}_{\ensuremath{-}}$ subspace. Qubit rotations are driven by the applied magnetic field and a field gradient provided by a micromagnet. We optimize the fidelity of this qubit as a function of the magnetic fields, taking advantage of ``sweet spots'' where the rotation frequencies are independent of the energy level detuning, providing protection against charge noise. We simulate gate operations and qubit rotations in the presence of quasistatic noise from charge and nuclear spins as well as leakage to nonqubit states. Our results show that, for silicon quantum dots, gate fidelities greater than $99%$ should be realizable, for rotations about two nearly orthogonal axes.
18 citations
TL;DR: This work describes an alternative method for identifying charge sensor events using wavelet edge detection and shows that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise.
Abstract: The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise.
15 citations
TL;DR: In this paper, a quantum dot coupled to a localized electronic state and presented evidence of controllable coupling between the quantum dot and the localized state is presented. But the results are consistent with a gate-voltage controllability tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
Abstract: Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
13 citations
TL;DR: Values of charge carrier mobility as a function of carrier density extracted from measurements are at least as high or higher than those obtained from companion measurements made on heterostructures grown on conventional strain graded substrates.
Abstract: To assess possible improvements in the electronic performance of two-dimensional electron gases (2DEGs) in silicon, SiGe/Si/SiGe heterostructures are grown on fully elastically relaxed single-crystal SiGe nanomembranes produced through a strain engineering approach. This procedure eliminates the formation of dislocations in the heterostructure. Top-gated Hall bar devices are fabricated to enable magnetoresistivity and Hall effect measurements. Both Shubnikov-de Haas oscillations and the quantum Hall effect are observed at low temperatures, demonstrating the formation of high-quality 2DEGs. Values of charge carrier mobility as a function of carrier density extracted from these measurements are at least as high or higher than those obtained from companion measurements made on heterostructures grown on conventional strain graded substrates. In all samples, impurity scattering appears to limit the mobility.
13 citations
TL;DR: In this paper, a quantum dot is coupled to a localized electronic state, and a set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot.
Abstract: Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
12 citations
TL;DR: In this paper, an alternative method for detecting charge sensor events using wavelet edge detection was proposed. But wavelet detection is not robust to low-frequency noise and signal drift.
Abstract: The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise.
TL;DR: In this article, a gate-defined double quantum dot is constructed in a Si/SiGe nanomembrane, which is controllable enough to enable tuning of the inter-dot tunnel coupling, identification of spin states, and measurement of a singlet-to-triplet transition as a function of an applied magnetic field.
Abstract: We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.