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Christie Simmons

Researcher at University of Wisconsin-Madison

Publications -  46
Citations -  2776

Christie Simmons is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Quantum dot & Qubit. The author has an hindex of 26, co-authored 46 publications receiving 2483 citations. Previous affiliations of Christie Simmons include Massachusetts Institute of Technology & Oberlin College.

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Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

TL;DR: This work demonstrates a qubit that is a hybrid of spin and charge, requiring neither nuclear-state preparation nor micromagnets, and enables fast rotations about two axes of the Bloch sphere.
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Crystalline silicon photovoltaics: a cost analysis framework for determining technology pathways to reach baseload electricity costs

TL;DR: In this article, the authors evaluate the potential of c-Si photovoltaics to reach this goal by developing a bottom-up cost model for C-Si wafer, cell, and module manufacturing, and performing a sensitivity analysis to determine research domains that provide the greatest impact on cost.
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Fast hybrid silicon double-quantum-dot qubit.

TL;DR: A quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity, enabling fast implementation of one- and two-qubit gates in a simpler geometry and with fewer operations than in other proposed quantumdot qubit architectures with fast operations.
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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

TL;DR: In this article, a rapid and repeatable laser-based hyperdoping method incorporating supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into a single-crystal surface layer was proposed to induce room-temperature infrared subband gap photoresponse in silicon.
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Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

TL;DR: The observation of spin blockade and lifetime-enhanced transport effects in Si/SiGe double quantum dots represents a promising step in the development of silicon-based quantum devices.