P
Paul M. Voyles
Researcher at University of Wisconsin-Madison
Publications - 269
Citations - 6930
Paul M. Voyles is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Amorphous solid & Scanning transmission electron microscopy. The author has an hindex of 40, co-authored 253 publications receiving 5796 citations. Previous affiliations of Paul M. Voyles include University of Puerto Rico at Mayagüez & LSI Corporation.
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Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si
TL;DR: Using annular dark-field scanning transmission electron microscopy, the direct, atomic-resolution observation of individual antimony (Sb) dopant atoms in crystalline Si is reported, and the size, structure, and distribution of these clusters are identified, responsible for the saturation of charge carriers.
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H2V3O8 Nanowire/Graphene Electrodes for Aqueous Rechargeable Zinc Ion Batteries with High Rate Capability and Large Capacity
Qiang Pang,Qiang Pang,Congli Sun,Yanhao Yu,Kangning Zhao,Ziyi Zhang,Paul M. Voyles,Gang Chen,Yingjin Wei,Xudong Wang +9 more
TL;DR: Aqueous rechargeable zinc ion batteries (ARZIBs) attracted much attention due to the low price, rich global distribution, high stability, relatively low redox potential and high theoretic capacity (820 mA h g−1) of zinc metal, which can be directly used as the anode material.
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Picometre-precision analysis of scanning transmission electron microscopy images of platinum nanocatalysts
Andrew B. Yankovich,Benjamin Berkels,Wolfgang Dahmen,Peter Binev,Sergio I. Sanchez,Steven A. Bradley,Ao Li,Izabela Szlufarska,Paul M. Voyles +8 more
TL;DR: Sub-picometre precision and standardless atom counting with <1 atom uncertainty in the same scanning transmission electron microscopy image provide new insight into the three-dimensional atomic structure of catalyst nanoparticle surfaces, which contain the active sites controlling catalytic reactions.
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Imaging individual atoms inside crystals with ADF-STEM
TL;DR: It is concluded that the primary nanocluster defect responsible for the electrical inactivity of Sb in Si at high concentration consists of only two atoms.
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Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
M.-Y. Ho,Hao Gong,Glen D. Wilk,B. W. Busch,Martin L. Green,Paul M. Voyles,David A. Muller,M. Bude,W.H. Lin,Alex See,M. E. Loomans,S. K. Lahiri,Petri Räisänen +12 more
TL;DR: In this article, the effects of annealing on the morphology and crystallization kinetics for the high-κ gate dielectric replacement candidate hafnium oxide (HfO2) were reported.