M
Mark A. Eriksson
Researcher at University of Wisconsin-Madison
Publications - 246
Citations - 11897
Mark A. Eriksson is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Quantum dot & Qubit. The author has an hindex of 52, co-authored 246 publications receiving 10400 citations. Previous affiliations of Mark A. Eriksson include Alcatel-Lucent & Harvard University.
Papers
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Journal Article
Mitigating the effects of charge noise and improving the coherence of a quantum dot hybrid qubit
Brandur Thorgrimsson,Dohun Kim,Yuan-Chi Yang,Christie Simmons,Daniel R. Ward,Ryan H. Foote,Donald E. Savage,Max G. Lagally,Mark Friesen,Susan Coppersmith,Mark A. Eriksson +10 more
TL;DR: In this article, it was shown that the Rabi decay rate of the quantum dot hybrid qubit is limited by charge noise for a large range of detunings, and that by tuning the parameters of the qubit, and by operating the qu bit at larger detuning, the coherence times can be increased by more than an order of magnitude.
Journal ArticleDOI
Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna
Erika Kawakami,Pasquale Scarlino,Lars R. Schreiber,Jonathan Prance,Donald E. Savage,M. G. Lagally,Mark A. Eriksson,Lieven M. K. Vandersypen +7 more
TL;DR: In this paper, transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna were performed and the response showed signatures of photon-assisted tunneling and only a small effect on charge stability.
Journal ArticleDOI
Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
Mingyun Yuan,Feng Pan,Zhen Yang,T. J. Gilheart,Fei Chen,Donald E. Savage,Max G. Lagally,Mark A. Eriksson,A. J. Rimberg +8 more
TL;DR: In this article, a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor is reported.
Proceedings ArticleDOI
Silicon-based nanomembrane materials: the ultimate in strain engineering
Hao-Chih Yuan,Michelle M. Roberts,Pengpeng Zhang,Byoungnam Park,Levente Klein,Donald E. Savage,Frank S. Flack,Zhenqiang Ma,Paul G. Evans,Mark A. Eriksson,George K. Celler,Max G. Lagally +11 more
TL;DR: In this article, the authors use the ideas of strain sharing and critical thickness combined with the ability to release the top layers of SOI, to create freestanding, dislocation-free, elastically strain relieved flexible Si/Ge membranes with nanometer scale thickness, which they call NanoFLEXSi or Si nanomembranes (SiNMs).
Journal ArticleDOI
Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures
Jack A. Tilka,Jin-Seong Park,Youngjun Ahn,Anastasios Pateras,K. C. Sampson,Donald E. Savage,Jonathan Prance,C. B. Simmons,Susan Coppersmith,Mark A. Eriksson,Max G. Lagally,Martin V. Holt,Paul G. Evans +12 more
TL;DR: In this paper, an extension of coherent x-ray optical simulations of convergent X-ray beam diffraction patterns to arbitrary xray incident angles is presented to allow the nanobeam diffraction pattern of complex heterostructures to be simulated faithfully.