M
Mark A. Eriksson
Researcher at University of Wisconsin-Madison
Publications - 246
Citations - 11897
Mark A. Eriksson is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Quantum dot & Qubit. The author has an hindex of 52, co-authored 246 publications receiving 10400 citations. Previous affiliations of Mark A. Eriksson include Alcatel-Lucent & Harvard University.
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Journal ArticleDOI
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Lisa A Tracy,E. P. Nordberg,Ralph W. Young,C. Borras Pinilla,H. L. Stalford,G. A. Ten Eyck,Kevin H. Eng,Kenton D. Childs,Joel R. Wendt,Robert K. Grubbs,Jeffrey R. Stevens,Michael Lilly,Mark A. Eriksson,Malcolm S. Carroll +13 more
TL;DR: In this article, the authors presented transport measurements of a tunable silicon metal-oxide semiconductor double quantum dot device with lateral geometry, and experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied.
Journal ArticleDOI
Measurements of Capacitive Coupling Within a Quadruple-Quantum-Dot Array
Samuel F. Neyens,Evan MacQuarrie,J. P. Dodson,J. Corrigan,Nathan Holman,Brandur Thorgrimsson,Mario Palma,Thomas McJunkin,Lisa F. Edge,Mark Friesen,Susan Coppersmith,Susan Coppersmith,Mark A. Eriksson +12 more
TL;DR: In this paper, a quadruple-quantum-dot array is modeled as a network of charge nodes joined by capacitors, and the authors demonstrate how the capacitive-coupling energy between pairs of double dots depends on the various capacitances in the network.
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Measurements of the Thermal Resistivity of InAlAs, InGaAs, and InAlAs/InGaAs Superlattices
Gabriel R. Jaffe,Song Mei,C. Boyle,Jeremy Kirch,Donald E. Savage,Dan Botez,Luke J. Mawst,Irena Knezevic,Max G. Lagally,Mark A. Eriksson +9 more
TL;DR: It is found that the additional resistance present in superlattices does not increase significantly when the layer thickness is decreased from 4 to 2 nm, and can be tuned by a factor of 2.5 by altering the lattice mismatch and thereby the phonon-mode mismatch at the interfaces.
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Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
Christie Simmons,Teck Seng Koh,Nakul Shaji,Madhu Thalakulam,Levente Klein,Hua Qin,H. Luo,Donald E. Savage,Max G. Lagally,A. J. Rimberg,Robert Joynt,Robert H. Blick,Mark Friesen,Susan Coppersmith,Mark A. Eriksson +14 more
TL;DR: In this paper, the authors analyzed electron-transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin-relaxation times.
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Preparation of nanoporous silica–zirconia layers by in situ sol–gel method
TL;DR: In this paper, thin layers of gel were grown on the outside of porous alumina support tubes using the permeation of water through pores of the tube to control the rate of hydrolysis with a reactive silica-zirconia alkoxide solution.