M
Mark-Alexander Henn
Researcher at National Institute of Standards and Technology
Publications - 45
Citations - 386
Mark-Alexander Henn is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Metrology & Extreme ultraviolet lithography. The author has an hindex of 9, co-authored 40 publications receiving 338 citations. Previous affiliations of Mark-Alexander Henn include University of Maryland, College Park & German National Metrology Institute.
Papers
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Journal ArticleDOI
A maximum likelihood approach to the inverse problem of scatterometry
TL;DR: An alternative method based on the maximum likelihood estimation (MLE) that determines the statistical error model parameters directly from measurement data is introduced that corrects the systematic errors present in LSQ results and improves the accuracy of scatterometry.
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Measurements of CD and sidewall profile of EUV photomask structures using CD-AFM and tilting-AFM
Gaoliang Dai,Kai Hahm,Frank Scholze,Mark-Alexander Henn,Hermann Gross,Jens Fluegge,Harald Bosse +6 more
TL;DR: In this article, an accurate and traceable measurement of critical dimension (CD) and sidewall profile of extreme ultraviolet (EUV) photomask structures using atomic force microscopes (AFMs) is introduced.
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Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization.
TL;DR: A Fourier domain normalization approach is used in the Fourier optical imaging code to simulate the full 3D scattered light field of nominally 15 nm-sized structures, accurately replicating the light field as a function of the focus position.
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Modeling of line roughness and its impact on the diffraction intensities and the reconstructed critical dimensions in scatterometry.
TL;DR: This work investigates the impact of line-edge and line-width roughness (LER, LWR) on the measured diffraction intensities in angular resolved extreme ultraviolet (EUV) scatterometry for a periodic line-space structure designed for EUV lithography.
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Improved grating reconstruction by determination of line roughness in extreme ultraviolet scatterometry
Mark-Alexander Henn,Sebastian Heidenreich,Hermann Gross,A. Rathsfeld,Frank Scholze,Markus Bär +5 more
TL;DR: The effect of line roughness on the reconstruction of grating parameters employing a maximum likelihood scheme is illustrated and the results obtained are in agreement with independent atomic force microscopy measurements.