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Markus Dankerl

Researcher at Technische Universität München

Publications -  10
Citations -  918

Markus Dankerl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Diamond & Field-effect transistor. The author has an hindex of 10, co-authored 10 publications receiving 824 citations.

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Chemical control of the charge state of nitrogen-vacancy centers in diamond

TL;DR: In this paper, the effect of surface termination on the charge state of nitrogen-vacancy (NV) centers, which have been ion-implanted a few nanometers below the surface of diamond, was investigated.
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Charge state manipulation of qubits in diamond

TL;DR: It is demonstrated that the charge state of the nitrogen-vacancy centre in diamond can be controlled by an electrolytic gate electrode, opening the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+.
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Graphene Solution‐Gated Field‐Effect Transistor Array for Sensing Applications

TL;DR: In this paper, the effect of the solution-gate potential on the electronic properties of graphene is explained using a model that considers the microscopic structure of water at the graphene/electrolyte interface.
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Diamond Transistor Array for Extracellular Recording From Electrogenic Cells

TL;DR: The use of diamond with its advantages for biological applications as a new material for biohybrid devices for the detection of cell signals is investigated using arrays of solution‐gate field‐effect transistors for electrical signals detection.
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The surface conductivity at the diamond/aqueous electrolyte interface.

TL;DR: It is demonstrated that in contrast to the in air situation, charge transfer across the diamond interface does not govern the surface conductivity in aqueous electrolyte when a gate electrode controls the diamond/electrolyte interfacial potential.