Stefan Birner

TL;DR: The Nextnano simulator as discussed by the authors is a simulation tool for semiconductor nanodevice simulation that has been developed for predicting and understanding a wide range of electronic and optical properties of semiconductor nano-structures.

TL;DR: In this article, the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for inter-band optoelectronics in the near infrared was studied.

TL;DR: An up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution are revealed, indicating a low defect density in the three-dimensional SiGe quantum dot crystals.

TL;DR: In this paper, the effect of the solution-gate potential on the electronic properties of graphene is explained using a model that considers the microscopic structure of water at the graphene/electrolyte interface.

TL;DR: The Nextnano 3 simulation tool as discussed by the authors provides global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures, such as the global electronic structure, optical properties, and the efiects of electric and magnetic flelds for virtually any geometry and combination of semiconducting materials.