Marta Clement

TL;DR: In this article, the suitability of piezoelectric aluminium nitride (AlN) films deposited by RF sputtering as the actuating element in microelectromechanical system (MEMS) devices was investigated.

TL;DR: The electroacoustic responses of the SAW filters were fitted by computations based on a simple circuital model that takes into account parasitic effects such as airborne electromagnetic coupling and conduction through the substrate, providing accurate values of the electromechanical coupling factor k2 even for devices with poor characteristics.

TL;DR: In this article, the influence of sputtering parameters on the preferred orientation of polycrystalline aluminum nitride thin films was studied, and different mechanisms influencing the preferred orientations of the films were considered, especially the transfer of energy to the adatoms on the substrate by particle bombardment.

TL;DR: In this article, the authors observed the anomalous behavior of sputtered AlN thin films that exhibit poor piezoelectric response in spite of having (0002) preferred orientation and narrow rocking curve with full width at half maximum below 2°.

TL;DR: In this paper, the effect of oxygen and argon impurities on the residual stress, crystal structure and piezoelectric response of sputtered AlN thin films for surface acoustic wave applications was investigated.