Enrique Iborra

TL;DR: It is proposed that the atomic reconstruction at the interface between highly dissimilar structures (such as fluorite and perovskite) provides both a large number of carriers and a high-mobility plane, yielding colossal values of the ionic conductivity.

TL;DR: In this article, the authors acknowledge support from the Innovative electronic manufacturing research centre (IeMRC) through the EPSRC funded flagship project SMART MICROSYSTEMS.

TL;DR: In this article, the suitability of piezoelectric aluminium nitride (AlN) films deposited by RF sputtering as the actuating element in microelectromechanical system (MEMS) devices was investigated.

TL;DR: The electroacoustic responses of the SAW filters were fitted by computations based on a simple circuital model that takes into account parasitic effects such as airborne electromagnetic coupling and conduction through the substrate, providing accurate values of the electromechanical coupling factor k2 even for devices with poor characteristics.

TL;DR: In this article, the influence of sputtering parameters on the preferred orientation of polycrystalline aluminum nitride thin films was studied, and different mechanisms influencing the preferred orientations of the films were considered, especially the transfer of energy to the adatoms on the substrate by particle bombardment.