Martin Hulman

TL;DR: In this paper, a reference-free Raman spectroscopy method was proposed for a precise thickness determination of the multilayered graphene oxide flakes, which is based on the normalization of the total integral intensity of D and G Raman bands to the integral intensity on the second-order optical phonon peak of the silicon substrate in the Raman spectrum.

TL;DR: In this paper, the authors used Raman spectroscopy as sensitive tool for the characterization of graphene samples and observed diverse shifts in the position of the Raman mode close to 2650 cm -1 in various as-prepared graphene flakes.

TL;DR: Very thin MoS2 films were prepared on hexagonal GaN/AlGaN/GaN (0001) and Si (100) substrates from a stoichiometric target by a pulsed laser deposition.

TL;DR: In this paper, a simplified version of the method where a one-zone tube furnace was used, a molybdenum film on a substrate and a sulfur powder were placed in the center of the furnace and heated at temperatures above 800°C.

TL;DR: This study reports on two different orientations of diindenoperylene (DIP) molecules on the same underlayer, i.e. on a few-layer MoS2 substrate, and shows that DIP molecules adopt a lying-down orientation when deposited on few- LayerMoS2 with horizontally oriented layers.