H
Hiroki Sato
Researcher at Tohoku University
Publications - 269
Citations - 5725
Hiroki Sato is an academic researcher from Tohoku University. The author has contributed to research in topics: Magnetic anisotropy & Scintillator. The author has an hindex of 36, co-authored 253 publications receiving 5002 citations. Previous affiliations of Hiroki Sato include NEC & Claude Bernard University Lyon 1.
Papers
More filters
Journal ArticleDOI
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
TL;DR: In this article, the authors investigated a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 n) with a recording size of 70 nm.
Journal ArticleDOI
Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
Hiroki Sato,Eli Christopher I. Enobio,Michihiko Yamanouchi,Shoji Ikeda,Shunsuke Fukami,Shun Kanai,Fumihiro Matsukura,Hideo Ohno +7 more
TL;DR: In this article, the authors investigated properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/Co FeB/MgO down to junction diameter (D) of 11 nm from 56 nm.
Journal ArticleDOI
Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO
TL;DR: In this article, the authors studied the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis.
Journal ArticleDOI
Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
Hiroki Sato,Michihiko Yamanouchi,Katsuya Miura,Shoji Ikeda,Huadong Gan,K. Mizunuma,R. Koizumi,Fumihiro Matsukura,Hideo Ohno +8 more
TL;DR: In this paper, the junction size dependence of critical current for spin transfer torque switching and thermal stability factor (E/kBT) was examined in CoFeB/MgO perpendicular magnetic tunnel junctions (p-MTJs).
Journal ArticleDOI
Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties
Kei Kamada,Shunsuke Kurosawa,P. Prusa,Martin Nikl,Vladimir V. Kochurikhin,Takanori Endo,Kousuke Tsutumi,Hiroki Sato,Yuui Yokota,Kazumasa Sugiyama,Akira Yoshikawa +10 more
TL;DR: The dependence of scintillation properties on crystal structure and Al-Ga was discussed in this article, where the Czochralski (Cz) method was used to grow Gd 3 (Al 1 − x Ga x ) 5 O 12 (GAGG) single crystals with various Ga concentration of x ǫ = 2, 2.4 and 2.7.