A
Angada B. Sachid
Researcher at University of California, Berkeley
Publications - 68
Citations - 3778
Angada B. Sachid is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Field-effect transistor. The author has an hindex of 23, co-authored 68 publications receiving 3050 citations. Previous affiliations of Angada B. Sachid include Indian Institute of Technology Bombay & Applied Materials.
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Journal ArticleDOI
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai,Sujay B. Desai,Surabhi R. Madhvapathy,Surabhi R. Madhvapathy,Angada B. Sachid,Angada B. Sachid,Juan Pablo Llinas,Juan Pablo Llinas,Qingxiao Wang,Geun Ho Ahn,Geun Ho Ahn,Gregory Pitner,Moon J. Kim,Jeffrey Bokor,Jeffrey Bokor,Chenming Hu,H.-S. Philip Wong,Ali Javey,Ali Javey +18 more
TL;DR: Molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode are demonstrated, which exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106.
Journal ArticleDOI
Field-Effect Transistors Built from All Two-Dimensional Material Components
Tania Roy,Mahmut Tosun,Mahmut Tosun,Jeong Seuk Kang,Jeong Seuk Kang,Angada B. Sachid,Sujay B. Desai,Sujay B. Desai,Mark Hettick,Mark Hettick,Chenming Hu,Ali Javey,Ali Javey +12 more
TL;DR: In this work, all interfaces are based on van der Waals bonding, presenting a unique device architecture where crystalline, layered materials with atomically uniform thicknesses are stacked on demand, without the lattice parameter constraints, demonstrating the promise of using an all-layered material system for future electronic applications.
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High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
Mahmut Tosun,Mahmut Tosun,Steven Chuang,Steven Chuang,Hui Fang,Hui Fang,Angada B. Sachid,Mark Hettick,Mark Hettick,Yongjing Lin,Yongjing Lin,Yuping Zeng,Yuping Zeng,Ali Javey,Ali Javey +14 more
TL;DR: In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized, and a complementary logic inverter is demonstrated.
Journal ArticleDOI
Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor
Asif Islam Khan,Korok Chatterjee,Juan Pablo Duarte,Zhongyuan Lu,Angada B. Sachid,Sourabh Khandelwal,Ramamoorthy Ramesh,Chenming Hu,Sayeef Salahuddin +8 more
TL;DR: In this paper, the authors report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs with gate length $L_{g}=100$ nm.
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Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors
Daewoong Kwon,Korok Chatterjee,Ava J. Tan,Ajay K. Yadav,Hong Zhou,Angada B. Sachid,Roberto dos Reis,Chenming Hu,Sayeef Salahuddin +8 more
TL;DR: Negative capacitance (NC) FETs with channel lengths from 30 nm to 50 nm, gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates.