M
Masahiko Nakayama
Researcher at Toshiba
Publications - 58
Citations - 1416
Masahiko Nakayama is an academic researcher from Toshiba. The author has contributed to research in topics: Magnetization & Layer (electronics). The author has an hindex of 16, co-authored 58 publications receiving 1380 citations.
Papers
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Journal ArticleDOI
Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
Masahiko Nakayama,Tadashi Kai,Naoharu Shimomura,Minoru Amano,Eiji Kitagawa,Toshihiko Nagase,Masatoshi Yoshikawa,Tatsuya Kishi,Sumio Ikegawa,Hiroaki Yoda +9 more
TL;DR: In this paper, a spin transfer switching in the TbCoFe∕CoFeB∕MgO∕ CoFeB ∕TbCo FeB free layer with a large coercive field of 1.2kOe and a large thermal stability factor of 107 at room temperature was studied.
Proceedings ArticleDOI
Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
Tatsuya Kishi,Hiroaki Yoda,Tadashi Kai,Toshihiko Nagase,Eiji Kitagawa,Masahisa Yoshikawa,Katsuya Nishiyama,Tadaomi Daibou,Makoto Nagamine,Minoru Amano,Shigeki Takahashi,Masahiko Nakayama,Naoharu Shimomura,Hisanori Aikawa,Sumio Ikegawa,Shinji Yuasa,Kay Yakushiji,Hitoshi Kubota,Akio Fukushima,Mikihiko Oogane,Terunobu Miyazaki,K. Ando +21 more
TL;DR: In this article, the authors investigated extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) cell for spin-transfer torque using a L10-crystalline ordered alloy.
Journal ArticleDOI
High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
Hiroaki Yoda,Tatsuya Kishi,Toshihiko Nagase,Masatoshi Yoshikawa,Katsuya Nishiyama,Eiji Kitagawa,Tadaomi Daibou,Minoru Amano,Naoharu Shimomura,Shigeki Takahashi,Tadashi Kai,Masahiko Nakayama,Hisanori Aikawa,Sumio Ikegawa,Makoto Nagamine,Junichi Ozeki,Shigemi Mizukami,Mikihiko Oogane,Yasuo Ando,Shinji Yuasa,K. Yakushiji,Hitoshi Kubota,Yoshishige Suzuki,Yoshinobu Nakatani,Terunobu Miyazaki,Koji Ando +25 more
TL;DR: In this article, an Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9μA was obtained for a write current width of 5μms.
Patent
Magnetoresistive element and method of manufacturing the same
Masahiko Nakayama,Masatoshi Yoshikawa,Tadashi Kai,Yutaka Hashimoto,Masaru Toko,Hiroaki Yoda,Jae Geun Oh,Lee Keum Bum,Choon Kun Ryu,Hyung Suk Lee,Sook Joo Kim +10 more
TL;DR: In this paper, a magnetoresistive element is disclosed, which includes a reference layer, a tunnel barrier layer, and a storage layer, including a first region and a second region provided outside the first region, the second region including element included in the first regions and another element being different from the element.
Patent
Magnetoresistance effect element and magnetic random access memory
TL;DR: In this article, the spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third layers, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second layer.