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Yoshio Miura

Researcher at National Institute for Materials Science

Publications -  187
Citations -  4421

Yoshio Miura is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Magnetoresistance & Tunnel magnetoresistance. The author has an hindex of 30, co-authored 174 publications receiving 3633 citations. Previous affiliations of Yoshio Miura include Osaka University & Tohoku University.

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Atomic disorder effects on half-metallicity of the full-Heusler alloys Co 2 ( Cr 1 − x Fe x ) Al : A first-principles study

TL;DR: In this paper, the authors investigated the atomic disorder effects on the half-metallicity of the full-Heusler alloy and showed that disorder between Cr and Al does not significantly reduce the spin polarization of the parent alloy.
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Low damping constant for Co2FeAl Heusler alloy films and its correlation with density of states

TL;DR: Gilbert damping for epitaxial Co2FeAl Heusler alloy films was investigated by analyzing the data of ferromagnetic resonance measured at the frequency of 2.20 GHz as discussed by the authors.
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Role of Electronic Structure in the Martensitic Phase Transition of Ni_2Mn_ Sn_ Studied by Hard-X-Ray Photoelectron Spectroscopy and Ab Initio Calculation

TL;DR: The underlying mechanism of the martensitic phase transition (MPT) in a new class of ferromagnetic shape memory alloys, Ni2Mn1+xSn1-x, is revealed by the combination of bulk-sensitive hard-x-ray photoelectron spectroscopy and a first-principles density-functional calculation.
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Mechanism of large magnetoresistance in Co 2 MnSi / Ag / Co 2 MnSi devices with current perpendicular to the plane

TL;DR: In this article, a fully epitaxial current-perpendicular-to-plane giant magnetoresistance (MR) device with half-metallic electrodes and a spacer was fabricated to investigate the relationship between the chemical ordering in CMS and its MR properties, including bulk and interface spin-asymmetry coefficients.
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Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices

TL;DR: In this article, a fully epitaxial Co2FexMn1−xSi(CFMS)/Ag/Co2FExMn 1−x Si current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses tCFMS were prepared.