M
Masaki Miyazato
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 14
Citations - 361
Masaki Miyazato is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Carrier lifetime & Stacking. The author has an hindex of 9, co-authored 14 publications receiving 260 citations.
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Journal ArticleDOI
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
Atsushi Tanaka,Hirofumi Matsuhata,Naoyuki Kawabata,Daisuke Mori,Kei Inoue,Mina Ryo,Takumi Fujimoto,Takeshi Tawara,Masaki Miyazato,Masaaki Miyajima,Kenji Fukuda,Akihiro Ohtsuki,Tomohisa Kato,Hidekazu Tsuchida,Yoshiyuki Yonezawa,Tsunenobu Kimoto +15 more
TL;DR: In this article, the growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging.
Journal ArticleDOI
Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes
Takeshi Tawara,Tetsuya Miyazawa,Mina Ryo,Masaki Miyazato,Takumi Fujimoto,Kensuke Takenaka,Shinichiro Matsunaga,Masaaki Miyajima,Akihiro Otsuki,Yoshiyuki Yonezawa,Tomohisa Kato,Hajime Okumura,T. Kimoto,Hidekazu Tsuchida +13 more
TL;DR: In this article, the dependency of minority carrier lifetimes on the nitrogen concentration, temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC epilayers was investigated.
Proceedings ArticleDOI
Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS
Yusuke Kobayashi,Naoyuki Ohse,Tadao Morimoto,Makoto Kato,Takahito Kojima,Masaki Miyazato,Manabu Takei,Hiroshi Kimura,Shinsuke Harada +8 more
TL;DR: In this article, an SBD-wall-integrated trench MOSFET (SWITCH-MOS) was developed, in which small cell pitch of 5pm was realized by utilizing trench side walls both for SBD and MOS channel with buried p+ layer.
Journal ArticleDOI
Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
Takeshi Tawara,Shinichiro Matsunaga,Takumi Fujimoto,Mina Ryo,Masaki Miyazato,Tetsuya Miyazawa,Kensuke Takenaka,Masaaki Miyajima,Akihiro Otsuki,Yoshiyuki Yonezawa,Tomohisa Kato,Hajime Okumura,Tsunenobu Kimoto,Hidekazu Tsuchida +13 more
TL;DR: In this article, the authors investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations.
Journal ArticleDOI
Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes
Shohei Hayashi,T. Yamashita,T. Yamashita,Junji Senzaki,Masaki Miyazato,Mina Ryo,Masaaki Miyajima,Tomohisa Kato,Yoshiyuki Yonezawa,Kazutoshi Kojima,Hajime Okumura +10 more
TL;DR: In this article, the origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test.