Takumi Fujimoto

TL;DR: In this article, the growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging.

TL;DR: In this article, the dependency of minority carrier lifetimes on the nitrogen concentration, temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC epilayers was investigated.

TL;DR: In this article, the authors investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations.

TL;DR: In this article, the application of highly N-doped buffer layers or a (N+B)-doped Buffer Layer to PiN diodes to suppress the expansion of Shockley stacking faults (SSFs) from the epilayer/substrate interface was studied.

TL;DR: In this article, the application of highly N-doped buffer layers or a (N+B)-doped Buffer Layer to PiN diodes to suppress the expansion of Shockley stacking faults (SSFs) from the epilayer/substrate interface was studied.