T. Kimoto

TL;DR: In this article, the impact of stacking faults on the performance of 4H-SiC (0001) Schottky barrier diodes has been investigated, and it is revealed that the stacking faults cause the lowering of Schottkey barrier height as well as the decrease of breakdown voltage.

TL;DR: In this article, Hall effect, admittance spectroscopy, low-temperature photoluminescence, and deep level transient spectroscope (DLTS) measurements revealed a low concentration of electron traps for both samples grown on Si and C faces, indicating high quality epilayers independent of the substrate polarity.

TL;DR: Au/6H-SiC Schottky barrier diodes with high blocking voltages were fabricated using layers grown by step-controlled epitaxy as mentioned in this paper, achieving a breakdown voltage of over 1100 V. The SIC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude.

TL;DR: In this paper, the EH6∕7 center (Ec−1.55eV) is the dominant midgap level as observed in DLTS spectra for n-type epilayers, and the lack of Poole-Frenkel effect in emission time constant from this level is donor-like (+∕0).

TL;DR: In this article, high-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature.