M
Matti Alatalo
Researcher at University of Oulu
Publications - 91
Citations - 2291
Matti Alatalo is an academic researcher from University of Oulu. The author has contributed to research in topics: Density functional theory & Adsorption. The author has an hindex of 23, co-authored 84 publications receiving 2093 citations. Previous affiliations of Matti Alatalo include Helsinki University of Technology & Brookhaven National Laboratory.
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Increased Elemental Specificity of Positron Annihilation Spectra.
TL;DR: It is shown that the high-momentum part of the Doppler-broadened annihilation spectra can be used to distinguish different elements, and the new approach adds increased elemental specificity to the PAS technique, and is useful in studying the elemental variations around a defect site.
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Theoretical and experimental study of positron annihilation with core electrons in solids
Matti Alatalo,Bernardo Barbiellini,Mikko Hakala,H. Kauppinen,T. Korhonen,Martti J. Puska,Kimmo Saarinen,P. Hautojärvi,Risto M. Nieminen +8 more
TL;DR: A theory for calculating the momentum distribution of annihilating positron-electron pairs in solids and the comparison of the theoretical and experimental spectra for alloys and vacancy defects tests the theoretical description for the positron distribution in delocalized and localized states.
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Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP
Matti Alatalo,H. Kauppinen,Kimmo Saarinen,Martti J. Puska,Jari Mäkinen,P. Hautojärvi,Risto M. Nieminen +6 more
TL;DR: It is shown that the Doppler broadening of positron annihilation radiation can be used in the identification of vacancy defects in compound semiconductors and is demonstrated by providing results for vacancies in InP.
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High temperature oxidation of Fe-Al and Fe-Cr-Al alloys: The role of Cr as a chemically active element
E. Airiskallio,E. Nurmi,M. H. Heinonen,I. J. Vayrynen,Kalevi Kokko,Matti Ropo,Marko Patrick John Punkkinen,H. Pitkänen,Matti Alatalo,János Kollár,Börje Johansson,Levente Vitos +11 more
TL;DR: Good high-temperature corrosion resistance of Fe-Al alloys in oxidizing environments is due to the alpha-Al2O3 film which is formed on the surface provided temperature is above 900 degrees C and th...
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Vacancy defects as compensating centers in Mg-doped GaN.
S. Hautakangas,J. Oila,Matti Alatalo,Matti Alatalo,Kimmo Saarinen,Laszlo Liszkay,D. Seghier,H. P. Gislason +7 more
TL;DR: The observation of V(N)-Mg(Ga) complexes confirms that vacancy defects in either the N or Ga sublattice are abundant in GaN at any position of the Fermi level during growth, as predicted previously by theoretical calculations.