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Mayumi Uno

Researcher at University of Tokyo

Publications -  78
Citations -  2154

Mayumi Uno is an academic researcher from University of Tokyo. The author has contributed to research in topics: Organic semiconductor & Transistor. The author has an hindex of 24, co-authored 77 publications receiving 1946 citations. Previous affiliations of Mayumi Uno include Osaka Prefecture University & Osaka University.

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Patternable solution-crystallized organic transistors with high charge carrier mobility.

TL;DR: The benchmark value, 10 cm 2 V − 1 s − 1 , of the charge mobility is achieved for the present OFETs, far exceeding the performance of former devices and opening a practical way to realize printed and fl exible electronics with suffi cient switching speed.
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Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives

TL;DR: In this paper, a droplet of the solution is sustained at an edge of a structure on an inclined substrate, so that the crystalline domain grows in the direction of inclination.
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Wafer-scale, layer-controlled organic single crystals for high-speed circuit operation.

TL;DR: It is demonstrated that wafer-size single crystals composed of an organic semiconductor bimolecular layer with an excellent mobility of 10 cm2 V−1 s−1 can be successfully formed via a simple one-shot solution process.
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Solution‐Crystallized Organic Field‐Effect Transistors with Charge‐Acceptor Layers: High‐Mobility and Low‐Threshold‐Voltage Operation in Air

TL;DR: High-mobility organic single-crystal transistors of air-stable compound 2,7-dioctyl andbenzothiophene treated with a 2,3,5,6-tetrafl uoro-7,7,8,8tetracyanoquinodimethane (F 4 -TCNQ) solution are reported.
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Rewritable Dual-Layer Phase-Change Optical Disk Utilizing a Blue-Violet Laser

TL;DR: In this paper, the feasibility of using a rewritable dual-layer phase-change optical disk utilizing a blue-violet laser was demonstrated for the first time, and a very thin recording layer with a new phase change material Ge-Sn-Sb-Te and a 10-nm-thick silver-alloy reflective layer was adopted to obtain a large transmittance and high-quality signals.