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Takafumi Uemura

Researcher at Osaka University

Publications -  124
Citations -  3747

Takafumi Uemura is an academic researcher from Osaka University. The author has contributed to research in topics: Organic semiconductor & Field-effect transistor. The author has an hindex of 29, co-authored 113 publications receiving 3156 citations. Previous affiliations of Takafumi Uemura include National Institute of Advanced Industrial Science and Technology & University of Tokyo.

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Patternable solution-crystallized organic transistors with high charge carrier mobility.

TL;DR: The benchmark value, 10 cm 2 V − 1 s − 1 , of the charge mobility is achieved for the present OFETs, far exceeding the performance of former devices and opening a practical way to realize printed and fl exible electronics with suffi cient switching speed.
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Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives

TL;DR: In this paper, a droplet of the solution is sustained at an edge of a structure on an inclined substrate, so that the crystalline domain grows in the direction of inclination.
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High-performance solution-processable N-shaped organic semiconducting materials with stabilized crystal phase.

TL;DR: N-shaped organic semiconductors are synthesized via four steps from a readily available starting material and exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility with small threshold voltages in solution-crystallized field-effect transistors.
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V-shaped organic semiconductors with solution processability, high mobility, and high thermal durability.

TL;DR: V-shaped organic semiconductors have been designed and synthesized via a large-scale applicable synthetic route and have demonstrated high-performance transistor properties with maximum mobilities and pronounced thermal durability inherent in the V-shaped cores.
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On the Extraction of Charge Carrier Mobility in High‐Mobility Organic Transistors

TL;DR: Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate, but after annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V(G) range.