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Michael Bain

Researcher at Queen's University Belfast

Publications -  17
Citations -  338

Michael Bain is an academic researcher from Queen's University Belfast. The author has contributed to research in topics: Chemical vapor deposition & Cobalt. The author has an hindex of 5, co-authored 17 publications receiving 229 citations.

Papers
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Journal ArticleDOI

Design and Experimental Validation of Liquid Crystal-Based Reconfigurable Reflectarray Elements With Improved Bandwidth in F-Band

TL;DR: A reconfigurable reflectarray which exploits the dielectric anisotropy of liquid crystals (LC) has been designed to operate in the frequency range from 96 to 104 GHz as discussed by the authors.
Journal ArticleDOI

Design and Demonstration of an Electronically Scanned Reflectarray Antenna at 100 GHz Using Multiresonant Cells Based on Liquid Crystals

TL;DR: In this paper, the design, fabrication, and measured results are presented for a reconfigurable reflectarray antenna based on liquid crystals (LCs) which operates above 100 GHz. The antenna has been designed to provide beam scanning capabilities over a wide angular range, a large bandwidth, and reduced side-lobe level.
Journal ArticleDOI

Accurate and Efficient Modeling to Calculate the Voltage Dependence of Liquid Crystal-Based Reflectarray Cells

TL;DR: In this article, two models that can predict the voltage-dependent scattering from liquid crystal (LC)-based reflectarray cells are presented, and the validity of both numerical techniques is demonstrated using measured results in the frequency range 94-110 GHz.
Proceedings Article

Nematic liquid crystals for reconfigurable millimeter wavelength antenna technology

TL;DR: In this article, the authors review recent developments for the dielectric characterization of nematic liquid crystal samples at mm wavelengths and describe their applications in reconfigurable reflectarray antenna and tunable linear to circular polarization reflectors.
Journal ArticleDOI

Low Temperature Bonding of PECVD Silicon Dioxide Layers

TL;DR: In this paper, the bonding of PECVD silicon dioxide layers, deposited at 300oC, to thermal silicon dioxide (SOI) layers, is described, and the bonding method can be used in layer/circuit transfer and has been demonstrated with the transfer of a 2 µm SOI layer from one substrate to another.