There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

An introductory review of the central ideas in the modern theory of dynamic critical phenomena is followed by a more detailed account of recent developments in the field. The concepts of the conventional theory, mode-coupling, scaling, universality, and the renormalization group are introduced and are illustrated in the context of a simple example---the phase separation of a symmetric binary fluid. The renormalization group is then developed in some detail, and applied to a variety of systems. The main dynamic universality classes are identified and characterized. It is found that the mode-coupling and renormalization group theories successfully explain available experimental data at the critical point of pure fluids, and binary mixtures, and at many magnetic phase transitions, but that a number of discrepancies exist with data at the superfluid transition of $^{4}\mathrm{He}$.

Theory of Dynamic Critical Phenomena

The talk with present the key results of the IPCC Working Group III 5th assessment report. Concluding four years of intense scientific collaboration by hundreds of authors from around the world, the report responds to the request of the world's governments for a comprehensive, objective and policy neutral assessment of the current scientific knowledge on mitigating climate change. The report has been extensively reviewed by experts and governments to ensure quality and comprehensiveness.

Climate change 2014 - Mitigation of climate change

A review on g-C3N4-based photocatalysts

The electronic structure of oxygen vacancy defects at the low index surfaces of ceria

Density functional theory studies of the structure and electronic structure of pure and defective low index surfaces of ceria

Oxygen vacancy formation and migration in ceria

Materials based on Cu2O are potential p-type transparent semiconducting oxides. Developing an understanding of the mechanism leading to p-type behaviour is important. An accepted origin is the formation of Cu vacancies. However, the way in which this mechanism leads to p-type properties needs to be investigated. This paper presents a first principles analysis of the origin of p-type semiconducting behaviour in Cu2O with 1.5 and 3% Cu vacancy concentrations. Plane wave density functional theory (DFT) with the Perdew–Burke–Ernzerhof (PBE) exchange–correlation functional is applied. In order to investigate the applicability of DFT, we firstly show that CuO, with 50% Cu vacancies cannot be described with DFT and in order to obtain a consistent description of CuO, the DFT+U approach is applied. The resulting electronic structure is consistent with experiment, with a spin moment of 0.64 μB and an indirect band gap of 1.48 eV for U = 7 eV. However, for a 3% Cu vacancy concentration in Cu2O, the DFT and DFT+U descriptions of Cu vacancies are similar, indicating that DFT is suitable for a small concentration of Cu vacancies; the formation energy of a Cu vacancy is no larger than 1.7 eV. Formation of Cu vacancies produces delocalised hole states with hole effective masses consistent with the semiconducting nature of Cu2O. These results demonstrate that the p-type semiconducting properties observed for Cu2O are explained by a small concentration of Cu vacancies.

The p-type conduction mechanism in Cu2O: a first principles study

Band gap modification for small-diameter (∼1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination. This effect has been observed in previous experimental and theoretical studies for hydrogenated wires. For a fixed cross-section, the functional group used to saturate the silicon surface significantly modifies the band gap, resulting in relative energy shifts of up to an electronvolt. The band gap shifts are traced to details of the hybridization between the silicon valence band and the frontier orbitals of the terminating group, which is in competition with quantum confinement.

Michael Nolan

Papers

The electronic structure of oxygen vacancy defects at the low index surfaces of ceria

Density functional theory studies of the structure and electronic structure of pure and defective low index surfaces of ceria

Oxygen vacancy formation and migration in ceria

The p-type conduction mechanism in Cu2O: a first principles study

Silicon nanowire band gap modification.