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Institution

Tyndall National Institute

About: Tyndall National Institute is a based out in . It is known for research contribution in the topics: Laser & Semiconductor laser theory. The organization has 1473 authors who have published 3607 publications receiving 71911 citations.


Papers
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Journal ArticleDOI
TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Abstract: All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.

2,090 citations

Journal ArticleDOI
TL;DR: The nitrogen-vacancy (NV) colour centre in diamond is an important physical system for emergent quantum technologies, including quantum metrology, information processing and communications, as well as for various nanotechnologies such as biological and sub-diffraction limit imaging, and for tests of entanglement in quantum mechanics as mentioned in this paper.
Abstract: The nitrogen-vacancy (NV) colour centre in diamond is an important physical system for emergent quantum technologies, including quantum metrology, information processing and communications, as well as for various nanotechnologies, such as biological and sub-diffraction limit imaging, and for tests of entanglement in quantum mechanics. Given this array of existing and potential applications and the almost 50 years of NV research, one would expect that the physics of the centre is well understood, however, the study of the NV centre has proved challenging, with many early assertions now believed false and many remaining issues yet to be resolved. This review represents the first time that the key empirical and ab initio results have been extracted from the extensive NV literature and assembled into one consistent picture of the current understanding of the centre. As a result, the key unresolved issues concerning the NV centre are identified and the possible avenues for their resolution are examined.

1,642 citations

Journal ArticleDOI
TL;DR: The nitrogen-vacancy (NV) colour centre in diamond is an important physical system for emergent quantum technologies, including quantum metrology, information processing and communications, as well as for various nanotechnologies such as biological and sub-diffraction limit imaging, and for tests of entanglement in quantum mechanics as mentioned in this paper.

1,625 citations

Journal ArticleDOI
TL;DR: In this paper, the authors presented a small (component volume 1 cm3, practical volume 1 5 cm3) electromagnetic generator utilizing discrete components and optimized for a low ambient vibration level based upon real application data.
Abstract: Vibration energy harvesting is receiving a considerable amount of interest as a means for powering wireless sensor nodes This paper presents a small (component volume 01 cm3, practical volume 015 cm3) electromagnetic generator utilizing discrete components and optimized for a low ambient vibration level based upon real application data The generator uses four magnets arranged on an etched cantilever with a wound coil located within the moving magnetic field Magnet size and coil properties were optimized, with the final device producing 46 µW in a resistive load of 4 k? from just 059 m s-2 acceleration levels at its resonant frequency of 52 Hz A voltage of 428 mVrms was obtained from the generator with a 2300 turn coil which has proved sufficient for subsequent rectification and voltage step-up circuitry The generator delivers 30% of the power supplied from the environment to useful electrical power in the load This generator compares very favourably with other demonstrated examples in the literature, both in terms of normalized power density and efficiency

1,313 citations

Journal ArticleDOI
TL;DR: In this article, the authors provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths.
Abstract: Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

939 citations


Authors

Showing all 1484 results

NameH-indexPapersCitations
Mark A. Ratner12796868132
Robert J. Young9064031962
Fabien Kéfélian8825558315
Rajeev Ahuja85107232325
J. M. D. Coey8174836364
Michael Thompson7691128151
Thomas G. Cotter6825119556
Rudolf Zentel6652816757
Muhammad Usman61120324848
Stefan Andersson-Engels6140211610
Justin D. Holmes6043114290
Michael A. Morris5841312145
Jean-Pierre Colinge5745819479
Carlo Alberto Bignozzi5222912421
Stephen O'Brien5215913385
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20232
202221
2021199
2020224
2019235
2018247