M
Michael Theurer
Researcher at Heinrich Hertz Institute
Publications - 21
Citations - 201
Michael Theurer is an academic researcher from Heinrich Hertz Institute. The author has contributed to research in topics: Photonic integrated circuit & Laser. The author has an hindex of 8, co-authored 17 publications receiving 127 citations. Previous affiliations of Michael Theurer include Fraunhofer Society.
Papers
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Journal ArticleDOI
Flip-Chip Integration of InP to SiN Photonic Integrated Circuits
Michael Theurer,Martin Moehrle,A. Sigmund,Karl-Otto Velthaus,Ruud M. Oldenbeuving,Lennart Wevers,F. M. Postma,Richard Mateman,Frederik Schreuder,Dimitri Geskus,Kerstin Worhoff,Ronald Dekker,Rene Heideman,Martin Schell +13 more
TL;DR: In this article, a hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits is presented, where vertical alignment stops are used to simplify the alignment process and allow for array integration with the same simplicity as for single dies.
Journal ArticleDOI
Photonic-integrated circuit for continuous-wave THz generation
Michael Theurer,Thorsten Göbel,Dennis Stanze,Ute Troppenz,Francisco M. Soares,N. Grote,Martin Schell +6 more
TL;DR: A photonic-integrated circuit for continuous-wave (cw) terahertz (THz) generation is demonstrated by comprising two lasers and an optical phase modulator on a single chip, enabling the full control of the THz signal to be enabled via a unique bidirectional operation technique.
Journal ArticleDOI
2 × 56 GB/s From a Double Side Electroabsorption Modulated DFB Laser and Application in Novel Optical PAM4 Generation
Michael Theurer,Hongyu Zhang,Yin Wang,Wei Chen,Li Chen,Zeng,Ute Troppenz,G. Przyrembel,A. Sigmund,Martin Moehrle,Martin Schell +10 more
TL;DR: In this article, a DFB laser with electroabsorption modulators integrated on both sides of the DFB was used to provide two independently modulated optical outputs from a single laser source and thus cut the required number of chips for multilane applications in half.
Journal ArticleDOI
4 × 56 Gb/s High Output Power Electroabsorption Modulated Laser Array With up to 7 km Fiber Transmission in L-Band
Michael Theurer,Martin Moehrle,Ute Troppenz,Heinz-Gunter Bach,A. Sigmund,G. Przyrembel,Marko Gruner,Martin Schell +7 more
TL;DR: In this article, an array of electroabsorption modulated lasers is proposed for high optical output power with semiconductor optical amplifiers at the front side of the chip for future 200 Gb/s transmitters.
Journal ArticleDOI
56 Gb/s L-band InGaAlAs ridge waveguide electroabsorption modulated laser with integrated SOA
TL;DR: In this article, an L-band InGaAlAs based electroabsorption modulated DFB laser integrated with a semiconductor optical amplifier is presented. But the authors focus on the influence of the integrated SOA on the device performance and present a DC and RF characterization.