Flip-Chip Integration of InP to SiN Photonic Integrated Circuits
Michael Theurer,Martin Moehrle,A. Sigmund,Karl-Otto Velthaus,Ruud M. Oldenbeuving,Lennart Wevers,F. M. Postma,Richard Mateman,Frederik Schreuder,Dimitri Geskus,Kerstin Worhoff,Ronald Dekker,Rene Heideman,Martin Schell +13 more
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TLDR
In this article, a hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits is presented, where vertical alignment stops are used to simplify the alignment process and allow for array integration with the same simplicity as for single dies.Abstract:
We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits. The integration interface comprises vertical alignment stops, which simplify the alignment process and allow for array integration with the same simplicity as for single dies. Horizontal alignment is carried out by utilizing optical backscatter reflectometry to get an active feedback signal without the need to operate the chip. Thus, typical contacting limitations of active flip-chip alignment are overcome. By using this method, we demonstrate the integration of InP DFB lasers with more than 60 mW of optical power coupled to a SiN waveguide with an averaged coupling loss of -2.1 dB. The hybrid integration process is demonstrated for single dies as well as full arrays. We evaluate the feasibility of the assembly process for complex photonic integrated circuits by integrating an InP gain chip to a SiN TriPleX external cavity. The process proves to be well suited and allows monitoring chip quality during assembly. A fully functional hybrid integrated tunable laser is fabricated, which is capable of full C-band tuning with optical output power of up to 60 mW.read more
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Hybrid and heterogeneous photonic integration
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High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity
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A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits
Frederic Y. Gardes,Afrooz Shooa,Greta De Paoli,Ilias Skandalos,S. T. Ilie,Teerapat Rutirawut,Wanvisa Talataisong,Joaquin Faneca,Valerio Vitali,Yaonan Hou,Thalia Dominguez Bucio,Ioannis Zeimpekis,Cosimo Lacava,Periklis Petropoulos +13 more
TL;DR: In this article , the authors present some of the recent advances in the field of silicon nitride photonic integrated circuits, focusing on the material deposition techniques currently available, illustrating the capabilities of each technique and the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.
References
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