M
Minho Kim
Researcher at Sungkyunkwan University
Publications - 10
Citations - 277
Minho Kim is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Logic gate & Dielectric. The author has an hindex of 5, co-authored 10 publications receiving 120 citations.
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Environment-Adaptable Artificial Visual Perception Behaviors Using a Light-Adjustable Optoelectronic Neuromorphic Device Array.
TL;DR: An artificial optoelectronic neuromorphic device array to emulate the light‐adaptable synaptic functions (photopic and scotopic adaptation) of the biological visual perception system is presented and successfully demonstrates diverse visual synaptic functions such as phototriggered short‐term plasticity, long‐term potentiation, and neural facilitation.
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Highly sensitive textile-based strain sensors using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/silver nanowire-coated nylon threads with poly- l -lysine surface modification
TL;DR: In this paper, a textile-based strain sensor using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/silver nanowire (Ag NW)-coated nylon threads for electronic textile applications was demonstrated.
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Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors
TL;DR: In this paper, a combinatorial approach for suppressing the persistent photo-conductance (PPC) characteristic in solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) was proposed to achieve rapid photo-recovery.
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Solution-processed oxide semiconductor-based artificial optoelectronic synapse array for spatiotemporal synaptic integration
TL;DR: In this paper, an optoelectronic synapse array consisting of solution-processed indium-gallium-zincoxide (IGZO) synapse devices emulating complex neural functions such as the spatio-temporal synaptic integration for neuromorphic implementation.
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Strontium doping effects on the characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide thin-film transistors
TL;DR: In this article, the authors investigated the strontium doping effects on the electrical and physical characteristics of solution-processed aluminum oxide dielectric layer and its application to lowvoltage-operated indium-gallium-zincoxide (IGZO) thin-film transistors (TFTs).