S
Seungbeom Choi
Researcher at Sungkyunkwan University
Publications - 14
Citations - 631
Seungbeom Choi is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Thin-film transistor & Gate dielectric. The author has an hindex of 8, co-authored 14 publications receiving 423 citations.
Papers
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Brain-Inspired Photonic Neuromorphic Devices using Photodynamic Amorphous Oxide Semiconductors and their Persistent Photoconductivity
TL;DR: The demonstration of photonic neuromorphic devices based on amorphous oxide semiconductors (AOSs) that mimic major synaptic functions, such as short‐term memory/long-term memory, spike‐timing‐dependent plasticity, and neural facilitation, is reported.
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Ultrasensitive Room-Temperature Operable Gas Sensors Using p-Type Na:ZnO Nanoflowers for Diabetes Detection
Rawat Jaisutti,Minkyung Lee,Jae Young Kim,Seungbeom Choi,Tae-Jun Ha,Jaekyun Kim,Hyoungsub Kim,Sung Kyu Park,Yong-Hoon Kim +8 more
TL;DR: Ultrasensitive room-temperature operable gas sensors utilizing the photocatalytic activity of Na-doped p-type ZnO (Na:ZnO) nanoflowers (NFs) are demonstrated as a promising candidate for diabetes detection.
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Double-layer anti-reflection coating using MgF2 and CeO2 films on a crystalline silicon substrate
TL;DR: In this article, double-layer anti-reflection (DLAR) coatings with MgF 2 and CeO 2 films were investigated and a theoretically optimized DLAR coating was found to have an average reflectance as low as 1.87% when wavelengths ranged from 0.4 μm to 1.1 μm.
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Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation
Minuk Lee,Jeong-Wan Jo,Yoon-Jeong Kim,Seungbeom Choi,Sung Min Kwon,Seong Pil Jeon,Antonio Facchetti,Yong-Hoon Kim,Sung Kyu Park +8 more
TL;DR: A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure.
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Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors
TL;DR: In this paper, a solution-processed lanthanum (La)-doped Al2O3 (LAO) gate dielectrics which exhibit low leakage current density, high dielectric constant, and relatively small frequency-dependent capacitance variation were demonstrated.