There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

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Design Of Analog Cmos Integrated Circuits

PDMS is enjoying continued and ever increasing popularity as the material of choice for microfluidic devices due to its low cost, ease of fabrication, oxygen permeability and optical transparency. However, PDMS's hydrophobicity and fast hydrophobic recovery after surface hydrophilization, attributed to its low glass transition temperature of less than -120 degrees C, negatively impacts on the performance of PDMS-based microfluidic device components. This issue has spawned a flurry of research to devise longer lasting surface modifications of PDMS, with particular emphasis on microfluidic applications. This review will present recent research on surface modifications of PDMS using techniques ranging from metal layer coatings and layer-by-layer depositions to dynamic surfactant treatments and the adsorption of amphipathic proteins. We will also discuss significant advances that have been made with a broad palette of gas-phase processing methods including plasma processing, sol-gel coatings and chemical vapor deposition. Finally, we will present examples of applications and future prospects of modified PDMS surfaces in microfluidics, in areas such as molecular separations, cell culture in microchannels and biomolecular detection via immunoassays.

Recent developments in PDMS surface modification for microfluidic devices

More than a decade of research in the field of thermal, motion, vibration and electromagnetic radiation energy harvesting has yielded increasing power output and smaller embodiments. Power management circuits for rectification and DC-DC conversion are becoming able to efficiently convert the power from these energy harvesters. This paper summarizes recent energy harvesting results and their power management circuits.

Micropower energy harvesting

To support bursty traffic on the Internet (and especially WWW) efficiently, optical burst switching (OBS) is proposed as a way to streamline both protocols and hardware in building the future gener...

Optical burst switching (OBS) - a new paradigm for an optical Internet

This paper presents a multi-band CMOS VCO using a double-tuned, current-driven transformer load. The dual frequency range oscillator is based on enabling/disabling the driving current in the secondary port of the transformer. This approach eliminates the effect of switches connected directly to the VCO tank whose capacitance and on-resistance affect both the tuning range and the phase noise of a typical multi-band oscillator. The relation between the coupling coefficient of the transformer load, selection of frequency bands, and the resulting quality factor at each band is investigated. The concept is validated through measurement results from a prototype fabricated in 0.25 ?m CMOS technology. The VCO has a measured tuning range of 1.94 to 2.55 GHz for the low frequency range and 3.6 to 4.77 GHz for the high frequency range. It draws a current of 1 mA from 1.8 V supply with a measured phase noise of -116 dBc/Hz at 1 MHz offset from a 2.55 GHz carrier. For the high frequency band, the VCO draws 10.1 mA from the same supply with a phase noise of -122.8 dBc/Hz at 1 MHz offset from a 4.77 GHz carrier.

/pdf/a-1-94-to-2-55-ghz-3-6-to-4-77-ghz-tunable-cmos-vco-based-on-1mylzn0ba3.pdf

A 1.94 to 2.55 GHz, 3.6 to 4.77 GHz Tunable CMOS VCO Based on Double-Tuned, Double-Driven Coupled Resonators

Due to its high bandwidth spectrum, Free-Space-Optical (FSO) communication has the potential to bridge the capacity gap between backbone fiber links and mobile ad-hoc links, especially in the last-mile. Though FSO can solve the wireless capacity problem, it brings new challenges such as frequent disruption of wireless communication links (intermittent connectivity) and the line-of-sight (LOS) requirements. In this paper, we study a multi-transceiver spherical FSO structure as a basic building block for enabling optical spectrum in mobile ad-hoc networking. We outline optimal designs of such multi-transceiver subsystems such that coverage is maximized and crosstalk among neighboring transceivers is minimized. We propose a low-level packaging architecture capable of handling hundreds of transceivers on a single structure. We also present MANET transport performance over such multi-element mobile FSO structures in comparison to legacy RF-based MANETs.

/pdf/multi-transceiver-optical-wireless-spherical-structures-for-4qrb35szxz.pdf

Multi-transceiver optical wireless spherical structures for MANETs

The potential of GaAs pHEMT technology for high-frequency power-switching applications is discussed within the context of integrated power supplies for portable wireless systems. Various technology considerations are presented, including the optimization of the power-switching transistor and passives integration. Two design examples for integrated dc-dc converters are implemented in a 0.5-μm GaAs E/D pHEMT process. The first uses coupled inductors to reduce the current ripple and enhance the dynamic performance of the converter. The two-phase, 0.5 A/phase converter occupies 2 mm × 2.1 mm without the output network. An 8.7-nH filter coupled inductor is implemented in 65-μm-thick top copper metal layer, and flip-chip bonded to the dc-dc converter board. The presented converter converts 4.5-V input to 3.3-V output at 150-MHz switching frequency with a measured power efficiency of 84%, which is one of the highest efficiencies reported to date for similar current/voltage ratings. The second example is a hysteric controlled, 100-MHz switching frequency single-phase GaAs pHEMT buck converter designed to drive power amplifier loads. The design can deliver up to 37-dB·m output power and has a peak efficiency of 88% and a 3-dB bandwidth of 14.5 MHz.

Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples

This paper presents a balanced frequency doubler with 6.5-dBm peak output power at 204 GHz in 130-nm SiGe BiCMOS technology ( $f_{T}/f_{\max }=210$ /250 GHz). To convert the single-ended input signal to a differential signal for balanced operation, an on-chip transformer-based balun is employed. Detailed design procedure and compensation techniques to lower the imbalance at the output ports, based on mixed mode S parameters are proposed and verified analytically and through electromagnetic simulations. The use of optimized harmonic reflectors at the input port results in a 2-dBm increase in output power without sacrificing the bandwidth of interest. The measured conversion loss of the frequency doubler is 9 dB with 6-dBm input power at 204-GHz output. The measured peak output power is 6.5 dBm with an on-chip power amplifier stage. The 3-dB output power bandwidth is measured to be wider than 50 GHz (170–220 GHz). The total chip area of the doubler is 0.09 mm2 and the dc power consumption is 90 mW from a 1.8-V supply, which corresponds to a 5% collector efficiency.

A Wideband SiGe BiCMOS Frequency Doubler With 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources

This work presents an inductorless, 10 Gbps automatic gain control (AGC) circuit including a speed enhanced variable gain amplifier (VGA), a power detector, a comparator, and a novel exponential function generator for extended dB-linear performance. Third-order interleaved feedback technique is utilized in the current steering VGA stage to achieve 10 Gb/s operation without using on-chip inductors. A stagger-tuned switching architecture for CMOS exponential function generation is proposed to achieve a dB-linear gain control range of ${\sim}40\;\text{dB}$ with better than $\pm 1\;\text{dB}$ gain error. The relationship between tuning range and approximation error is analyzed and a novel current ratio generator circuit is proposed to implement the approximation functions in the current domain. The AGC circuit achieves a highest data rate of 10 Gb/s for ${2}^{31}{-}1$ PRBS input, maintaining $360\;\text{mV}_\text{p-p}$ constant differential output with a BER ${ for an input dynamic range of ${\sim}24\;\text{dB}$ (15–240 $\text{mV}_\text{p-p}$ ). Fabricated in IBM 0.13 $\upmu \text{m}$ CMOS technology, the chip draws 50 mW from a 1.2 V power supply (excluding the output buffer) and occupies an active area of $0.4\;\text{mm}^{2}$ .

Mona M. Hella

Papers

A 1.94 to 2.55 GHz, 3.6 to 4.77 GHz Tunable CMOS VCO Based on Double-Tuned, Double-Driven Coupled Resonators

Multi-transceiver optical wireless spherical structures for MANETs

Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples

A Wideband SiGe BiCMOS Frequency Doubler With 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources

A 10 Gb/s Inductorless AGC Amplifier With 40 dB Linear Variable Gain Control in 0.13 $\upmu \text{m}$ CMOS