Moritz von Witzleben

TL;DR: Variability found in experimental measurements can be reproduced for important device characteristics such as I-V characteristics, endurance behavior and most significantly the SET and RESET kinetics, which enables the study of spatial and temporal variability and its impact on the circuit and system level.

TL;DR: In this work, the ultimate switching speed limit of redox-based resistive switching devices is discussed and it is derived that the switching speed is limited by the phonon frequency.

TL;DR: In this article, a nanometer-sized heating structure is employed to separate the impact of temperature and electric fields on the switching kinetics of resistive switching memories and further deepen the understanding of the influence of local Joule heating.

TL;DR: In this article, the authors reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics, and the elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications.