Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models
Christopher Bengel,Anne Siemon,Felix Cüppers,Susanne Hoffmann-Eifert,Alexander Hardtdegen,Moritz von Witzleben,Lena Hellmich,Rainer Waser,Stephan Menzel +8 more
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TLDR
Variability found in experimental measurements can be reproduced for important device characteristics such as I-V characteristics, endurance behavior and most significantly the SET and RESET kinetics, which enables the study of spatial and temporal variability and its impact on the circuit and system level.Abstract:
Bipolar resistive switching (BRS) cells based on the valence change mechanism show great potential to enable the design of future non-volatile memory, logic and neuromorphic circuits and architectures. To study these circuits and architectures, accurate compact models are needed, which showcase the most important physical characteristics and lead to their specific experimental behavior. If BRS cells are to be used for computation-in-memory or for neuromorphic computing, their dynamical behavior has to be modeled with special consideration of switching times in SET and RESET. For any realistic assessment, variability has to be considered additionally. This study shows that by extending an existing compact model, which by itself is able to reproduce many different experiments on device behavior critical for the anticipated device purposes, variability found in experimental measurements can be reproduced for important device characteristics such as I-V characteristics, endurance behavior and most significantly the SET and RESET kinetics. Furthermore, this enables the study of spatial and temporal variability and its impact on the circuit and system level.read more
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Principles Of Random Walk
TL;DR: The principles of random walk is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can get it instantly.
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HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
TL;DR: In this article, the authors analyzed the instability of the high resistive state (HRS) measured on ZrO2-based devices via Factorial Hidden Markov Models.
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Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns.
Christopher Bengel,Felix Cüppers,Melika Payvand,Regina Dittmann,Rainer Waser,Rainer Waser,Susanne Hoffmann-Eifert,Stephan Menzel +7 more
TL;DR: In this paper, the authors present an experimental analysis of d2d and c2c variability of filamentary-type bipolar switching HfO2/TiOx nano-sized crossbar devices and match the experimentally observed variabilities to their physically motivated JART VCM compact model.
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Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
Vasileios Ntinas,Alon Ascoli,Ioannis Messaris,Yongmin Wang,Vikas Rana,Stephan Menzel,Ronald Tetzlaff +6 more
TL;DR: In this paper , the simplification of the JART memristor model, a generic physics-based model of Valence Change Mechanism (VCM) memristors, is presented.
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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Christopher Bengel,Johannes Mohr,Stefan Wiefels,Abhairaj Abhairaj Singh,Anteneh Gebregiorgis,Rajendra Bishnoi,Said Hamdioui,Rainer Waser,Dirk Wouters,Stephan Menzel +9 more
TL;DR: This work experimentally and theoretically investigate the impact of device- and circuit-level effects on the VMM in a VCM crossbars and shows that the variability of the low resistive state plays a key role and that reading in the RESET direction should be favored to read in the SET direction.
References
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