Felix Cüppers

TL;DR: In this article, the authors discuss the physical origin of the significant reduction in the switching variability of HfO2-based devices achieved by the insertion of a thin TiO x layer between the HFO2 layer and the oxygen exchange metal layer.

TL;DR: In this paper, the authors show that analog and binary conductance modulation can be achieved in a Pt/HfO2/TiOx/Ti VCM cell by varying the operation conditions.

TL;DR: Variability found in experimental measurements can be reproduced for important device characteristics such as I-V characteristics, endurance behavior and most significantly the SET and RESET kinetics, which enables the study of spatial and temporal variability and its impact on the circuit and system level.

TL;DR: This work reports on nanosized asymmetric memristive cells from 3 to 6 nm thick TiO2 films by atomic layer deposition, which reveal a coexistence of c8w and 8w switching in the same cell, and proposes a model, which explains 8w BRS by an oxygen transfer process across the Pt/TiO2 Schottky interface.

TL;DR: In this paper, the authors present an experimental analysis of d2d and c2c variability of filamentary-type bipolar switching HfO2/TiOx nano-sized crossbar devices and match the experimentally observed variabilities to their physically motivated JART VCM compact model.