Vikas Rana

TL;DR: For the Ta/Ta2O5 system, a rutile-type TaO2 film is believed to mediate switching, and it is shown that devices can be switched from a valence change mode to an electrochemical metallization mode by introducing an intermediate layer of amorphous carbon.

TL;DR: The experimental results show, for the first time, that it is possible to model fuzzy logic natively using multi-state memristive devices.

TL;DR: In this article, a combined experimental and numerical modeling approach is presented to address the issues of the gradual reset in resistive switching memories based on the valence change mechanism, which can be programmed by changing the maximum applied voltage, making resistive switches highly interesting for multibit data storage and neuromorphic applications.

TL;DR: In this article, five types of selectorless devices are considered to validate the CRS-logic concept is experimentally by means of the IMP and AND logic operations, and the feasibility of XOR and XNOR operations using a modified logic concept is applied for both CS and CRS devices and the pros and cons are discussed.

TL;DR: F Fourier transform infra red (FTIR), nuclear magnetic resonance (NMR) and scanning electron microscope (SEM) study were used to characterize the CMC product, which showed the non-Newtonian pseudoplastic behavior.