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Moustafa Ahmed

Researcher at Minia University

Publications -  158
Citations -  1476

Moustafa Ahmed is an academic researcher from Minia University. The author has contributed to research in topics: Semiconductor laser theory & Laser. The author has an hindex of 19, co-authored 141 publications receiving 1172 citations. Previous affiliations of Moustafa Ahmed include Kanazawa University & King Abdulaziz University.

Papers
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Numerical modeling of intensity and phase noise in semiconductor lasers

TL;DR: In this paper, a self-consistent numerical approach is demonstrated to analyze intensity and phase noise in semiconductor lasers, taking into account the intrinsic fluctuations of the photon number, carrier number, and phase.
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Physical, optical and gamma radiation shielding competence of newly boro-tellurite based glasses: TeO2–B2O3–ZnO–Li2O3–Bi2O3

TL;DR: In this article, a traditional melt quenching method was utilized to synthesize glasses with a nominal chemical composition (80-x)TeO2-xB2O3-5ZnO-5Li 2O3−10Bi2O-3: 30≤ x−≤ ǫ −80 −mol%).
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Influence of instantaneous mode competition on the dynamics of semiconductor lasers

TL;DR: In this article, a comprehensive theoretical investigation of the influence of instantaneous mode-competition phenomena on the dynamics of semiconductor laser systems is presented, based on numerical simulations of the multimode rate equations superposed by Langevin noise sources that account for the intrinsic fluctuations associated with the spontaneous emission.
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An improved analysis of semiconductor laser dynamics under strong optical feedback

TL;DR: In this article, an improved theoretical model was proposed to analyze the dynamics and operation of semiconductor laser under optical feedback (OFB) for arbitrary strength of OFB ranging from weak to very strong.
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Field fluctuations and spectral line shape in semiconductor lasers subjected to optical feedback

TL;DR: In this article, the spectral line shape and the associated spectra of the relative intensity noise (RIN) and frequency noise (FN) in semiconductor lasers were investigated based on a generalized simulation model that treated the OFB as a multiple-roundtrip time delay of the lasing field in the external cavity.