We present models for the optical functions of 11 metals used as mirrors and contacts in optoelectronic and optical devices: noble metals (Ag, Au, Cu), aluminum, beryllium, and transition metals (Cr, Ni, Pd, Pt, Ti, W). We used two simple phenomenological models, the Lorentz-Drude (LD) and the Brendel-Bormann (BB), to interpret both the free-electron and the interband parts of the dielectric response of metals in a wide spectral range from 0.1 to 6 eV. Our results show that the BB model was needed to describe appropriately the interband absorption in noble metals, while for Al, Be, and the transition metals both models exhibit good agreement with the experimental data. A comparison with measurements on surface normal structures confirmed that the reflectance and the phase change on reflection from semiconductor-metal interfaces (including the case of metallic multilayers) can be accurately described by use of the proposed models for the optical functions of metallic films and the matrix method for multilayer calculations.

Optical properties of metallic films for vertical-cavity optoelectronic devices.

We review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry‐Perot resonantmicrocavity. Such resonantcavity enhanced (RCE) devices benefit from the wavelength selectivity and the large increase of the resonant optical field introduced by the cavity. The increased optical field allows RCE photodetector structures to be thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. Off‐resonance wavelengths are rejected by the cavity making RCE photodetectors promising for low crosstalk wavelength division multiplexing(WDM) applications. RCE optical modulators require fewer quantum wells so are capable of reduced voltage operation. The spontaneous emission spectrum of RCE light emitting diodes(LED) is drastically altered, improving the spectral purity and directivity. RCE devices are also highly suitable for integrated detectors and emitters with applications as in optical logic and in communication networks. This review attempts an encyclopedic overview of RCE photonicdevices and systems. Considerable attention is devoted to the theoretical formulation and calculation of important RCE device parameters. Materials criteria are outlined and the suitability of common heteroepitaxial systems for RCE devices is examined. Arguments for the improved bandwidth in RCE detectors are presented intuitively, and results from advanced numerical simulations confirming the simple model are provided. An overview of experimental results on discrete RCE photodiodes, phototransistors, modulators, and LEDs is given. Work aimed at integrated RCE devices,optical logic and WDM systems is also covered. We conclude by speculating what remains to be accomplished to implement a practical RCE WDM system.

Resonant cavity enhanced photonic devices

The growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15–40 nm and about 2 μm long are reviewed and discussed. Experimental results for growing whiskers using Au as a growth catalyst during metalorganic vapor phase epitaxy (MOVPE) and the shape and growth direction of whiskers provide new insight into growth control of GaAs and InAs whiskers. The crystal structure of whiskers, Au behavior during MOVPE, and their growth mechanism are reviewed and discussed on the basis of transmission electron microscopic analysis. The photoluminescence spectra of GaAs wires are compared with those of a GaAs epitaxial layer, and the effect of surface treatment on the luminescence peak energy shift is discussed. The time dependent photoluminescence of GaAs wires is also discussed. The application of GaAs whiskers to light emitting devices is reviewed because a semiconductor wire structure employing quantum size effects is a very important element of electronic and optical devices.

Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

Semiconductor diode lasers can be used in a variety of applications including telecommunications, displays, solid-state lighting, sensing and printing. Among them, vertical-cavity surface-emitting lasers1,2,3 (VCSELs) are particularly promising. Because they emit light normal to the constituent wafer surface, it is possible to extract light more efficiently and to fabricate two-dimensional device arrays. A VCSEL contains two distributed Bragg reflector (DBR) mirrors for optical feedback, separated by a very short active gain region. Typically, the reflectivity of the DBRs must exceed 99.5% in order for the VCSEL to lase. However, the realization of practical VCSELs that can be used over a broad spectrum of wavelengths has been hindered by the poor optical and thermal properties of candidate DBR materials4,5,6. In this Letter, we present surface-emitting lasers that incorporate a single-layer high-index-contrast subwavelength grating7,8 (HCG). The HCG provides both efficient optical feedback and control of the wavelength and polarization of the emitted light. Such integration reduces the required VCSEL mirror epitaxial thickness by a factor of two and increases fabrication tolerance. This work will directly influence the future designs of VCSELs, photovoltaic cells and light-emitting diodes at blue–green, 1.3–1.55 µm and mid- to far-infrared wavelengths.

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A surface-emitting laser incorporating a high-index-contrast subwavelength grating

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching packaging and arrays, and ultrasmall devices. >

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Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

The dynamic, polarization, and transverse mode characteristics of strained InGaAs-GaAs quantum well vertical cavity surface emitting lasers (VCSELs) emitting at 0.98 mu m are investigated. The dynamic behavior of VCSELs with high and low operating voltages and series resistances is compared. A large wavelength chirp in the lasing spectrum was observed for the lasers with high voltage/resistance, even under low-duty-cycle pulse operation. This is thought to be due to resistive heating close to the laser junction. It is observed that the transverse mode structure of VCSELs and their dependence on laser dimensions and drive current are highly analogous to those of edge emitting lasers, whereas the polarization characteristics of the two types of lasers are significantly different. >

Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers

Techniques to achieve wavelength multiplexing and tuning capabilities in vertical-cavity surface-emitting lasers (VCSELs) are described, and experimental results are given. The authors obtained 140 unique, uniformly separated, single-mode wavelength emissions from a 7*20 VCSEL array. Large total wavelength span ( approximately 430 AA) and small wavelength separation ( approximately 3 AA) are obtained simultaneously with uncompromised laser performance. All 140 lasers have nearly the same threshold currents, voltages, and resistances. Wavelength tuning is obtained by using a three-mirror coupled-cavity configuration. The three-mirror laser is a two-terminal device and requires only one top contact. Discrete tuning with a range as large as 61 AA is achieved with a small change in drive current of only 10.5 mA. >

Multiple wavelength tunable surface-emitting laser arrays

Transverse mode characteristics of vertical cavity surface‐emitting (VC‐SE) lasers are described. The mode structure is investigated as a function of the transverse dimension for proton‐implanted gain‐guided VC‐SE lasers. A comparison is made to an air‐post index‐guided structure. The lasing modes and the evolution of the modes with increasing drive current for the VC‐SE lasers are observed to be highly analogous to those of the edge‐emitting lasers. Broad‐area gain‐guided lasers lase in the fundamental TEM00 mode near threshold. At higher currents, high‐order modes are successively excited. A 5 μm square proton‐implanted gain‐guided VC‐SE laser emits a single mode. On the other hand, an air‐post index‐guided SE laser, due to the large index difference between the laser and the cladding, emits multiple transverse modes. Moreover, we show that the gain‐guided VC‐SE lasers exhibit better device characteristics than the air‐post index‐guided lasers.

Transverse mode characteristics of vertical cavity surface-emitting lasers

Coupling of two‐dimensional (2D) vertical‐cavity surface‐emitting lasers (VCSELs) to give a coherent supermode is described. The top metal layer of a stained‐layer InGaAs quantum well VCSEL structure was patterned laterally by depositing various metals with different optical reflectivities. This lateral reflectivity patterning defined a 2D laser array sharing the same ‘‘supercavity’’. It is shown that these 2D arrays oscillate in a stable single, coherent 2D supermode. This was achieved with a simple planar process and without significant deterioration of threshold current and efficiency relative to an equivalent broad‐area VCSEL.

Two‐dimensional phase‐locked arrays of vertical‐cavity semiconductor lasers by mirror reflectivity modulation

We report the structure and lasing characteristics of GaAs/AlGaAs vertically stacked multiple‐quantum‐wire (QWR) semiconductor lasers grown by organometallic chemical vapor deposition on V‐grooved substrates. The active region in these lasers consists of three crescent‐shaped wires, placed at the center of a single‐mode optical waveguide. The higher optical confinement factor, compared to single‐QWR structures, leads to reduced threshold currents, as low as 0.6 mA for high‐reflection coated devices at room temperature. The lower threshold carrier density results in oscillation at a lower QWR subband as compared to single‐QWR laser structures.

N. G. Stoffel

Papers

Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers

Multiple wavelength tunable surface-emitting laser arrays

Transverse mode characteristics of vertical cavity surface-emitting lasers

Two‐dimensional phase‐locked arrays of vertical‐cavity semiconductor lasers by mirror reflectivity modulation

Vertically stacked multiple‐quantum‐wire semiconductor diode lasers