Naoki Makita

TL;DR: In this article, a liquid crystal display device including a display section including a liquid-crystal layer, pixel electrodes located in a matrix on one of the pair of substrates, a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes, and a peripheral driving circuit located for driving the display section, the peripheral drive circuit being located on the substrate on which the first thin-film transistors are located and having a second thin film transistor.

TL;DR: In this article, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained using the newly introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films.

TL;DR: In this article, a method for producing a semiconductor film is described, which includes the steps of: (a) forming an amorphous semiconductor on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphus semiconductor material into at least a part of the material; and (c) crystallizing the material by heating to obtain a crystalline semiconductor oxide film from the material, and (d) oxidizing a surface of the crystalline material to form a semiconducting oxide film containing

TL;DR: In this paper, the introduction of the catalyst elements is conducted by various methods such as: a formation of a film containing a minute amount of the catalysts, application of a solution containing the catalyst element in several spin coating cycles, diffusion of a catalyst element through a buffer layer, dipping into a solution in which the catalyts are dissolved or dispersed, or formation of plating layer containing the catalyters, resulting in polycrystallization of a portion of the amorphous semiconductor film.

TL;DR: In this article, a method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed.