Patent
Method for fabricating a semiconductor device
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TLDR
In this article, a method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed.Abstract:
A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film Then, the upper crystalline silicon semiconductor film is removed By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reducedread more
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Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
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References
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Method for producing semiconductor device
Abstract: In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
Patent
Method for manufacturing semiconductor device
TL;DR: In this article, an impurity is injected into a polycrystalline Si film 45, and the impurity ions are diffused to an Si substrate 11 to form diffusion layers 26, 32.
Patent
Semiconductor, semiconductor device, and method for fabricating the same
TL;DR: In this paper, a substantially amorphous silicon film is annealed at a temperature either lower than normal crystallization temperature of amorphized silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film.
Patent
Process for fabricating thin film transistor
TL;DR: In this paper, a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time, and then the area not crystallised by annesaling is also crystallized, the oxide film is then etched.
Patent
Method for manufacturing a semiconductor device using a catalyst
TL;DR: In this article, a method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film.