Patent
Method for fabricating a semiconductor device using a catalyst introduction region
Naoki Makita,Funai Takashi,Yoshitaka Yamamoto,Yasuhiro Mitani,Katsumi Nomura,Tadayoshi Miyamoto,Takamasa Kosai +6 more
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TLDR
In this article, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained using the newly introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films.Abstract:
Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.read more
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Patent
Semiconductor device and method for forming the same
TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Patent
Semiconductor Device and Method of Fabricating the Same
TL;DR: In this paper, an active matrix display (AMD) with pixel electrodes, gate wirings and source wires is proposed, in which pixel electrodes are arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the amount of steps.
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Semiconductor device and manufacturing method therefor
TL;DR: In this paper, a gate overlapping structure is realized with the side wall functioning as an electrode, where the first impurity region is formed to be overlapped with a side wall.
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Method for producing semiconductor device
Abstract: In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
Patent
Laser irradiation apparatus
TL;DR: In this article, the uniformity of laser annealing can be improved by the minimum number of homogenizers, which is shown to be the case in the case of linear laser light.
References
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Journal ArticleDOI
Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films
C. Hayzelden,J. L. Batstone +1 more
TL;DR: In this paper, the nucleation and growth of isolated nickel disilicide precipitates in amorphous Si thin films and the subsequent low-temperature silicide-mediated crystallization of Si was studied using in situ transmission electron microscopy.
Patent
Low temperature crystallization and pattering of amorphous silicon films
TL;DR: In this paper, a very thin discontinuous film of a nucleating site forming material over the amorphous Si prior to rapid thermal anneal is used to reduce the temperature of polycrystalline Si to a temperature range from 550° C to 650° C.
Patent
Method for manufacturing semiconductor device
TL;DR: In this article, an impurity is injected into a polycrystalline Si film 45, and the impurity ions are diffused to an Si substrate 11 to form diffusion layers 26, 32.
Patent
Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
Stephen J. Fonash,Gang Liu +1 more
TL;DR: In this paper, a patterning of the deposition of the nucleating site forming material on the glass substrate was proposed to selectively crystallize only in areas in contact with the forming material.
Patent
Process for fabricating thin film transistor
TL;DR: In this paper, a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time, and then the area not crystallised by annesaling is also crystallized, the oxide film is then etched.