Narciso Gambacorti

TL;DR: In this paper, pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained Silicon-On-Insulator, and compressive SiGe-on-insulator were investigated.

TL;DR: In this article, the authors investigated the material properties of ZnO polycrystalline thin films prepared by thermal atomic layer deposition (ALD) with the presence of molecular oxygen pulsing during the growth.

TL;DR: This work presents an alternative solution using an electro-chemical method allowing to fill even small and dense pores, making APT analysis possible and 3D reconstruction possible.

TL;DR: The exploitation of a large amount of information of an electron tomography acquisition is proposed to achieve robust and automatic mixed Poisson-Gaussian noise parameter estimation and denoising using undecimated wavelet transforms and 3D reconstruction.

TL;DR: The low thermal conductivity (κ) of individual porous Si nanowires prepared from MACE, with values as low as 0.87 W·m−1·K−1 for 90 nm diameter wires with 35–40% porosity, is reported.