There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Microwave photonics, which brings together the worlds of radiofrequency engineering and optoelectronics, has attracted great interest from both the research community and the commercial sector over the past 30 years and is set to have a bright future. The technology makes it possible to have functions in microwave systems that are complex or even not directly possible in the radiofrequency domain and also creates new opportunities for telecommunication networks. Here we introduce the technology to the photonics community and summarize recent research and important applications.

Microwave photonics combines two worlds

Physical Review B

Within the field of nanotechnology, nanoparticles are one of the most prominent and promising candidates for technological applications. Self-assembly of nanoparticles has been identified as an important process where the building blocks spontaneously organize into ordered structures by thermodynamic and other constraints. However, in order to successfully exploit nanoparticle self-assembly in technological applications and to ensure efficient scale-up, a high level of direction and control is required. The present review critically investigates to what extent self-assembly can be directed, enhanced, or controlled by either changing the energy or entropy landscapes, using templates or applying external fields.

Directed Self-Assembly of Nanoparticles

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole wavefunction overlap and improved radiative recombination rate are investigated for nitride LEDs application. The effect of interface abruptness in staggered InGaN QWs on radiative recombination rate is studied. Studies show that the less interface abruptness between the InGaN sub-layers will not affect the performance of the staggered InGaN QWs detrimentally. The growths of linearly-shaped staggered InGaN QWs by employing graded growth temperature grading are presented. The effect of current injection efficiency on IQE of InGaN QWs LEDs and other approaches to reduce dislocation in InGaN QWs LEDs are also discussed. The optimization of both radiative efficiency and current injection efficiency in InGaN QWs LEDs are required for achieving high IQE devices emitting in the green spectral regime and longer.

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Staggered InGaN quantum wells (QWs) grown by metal-organic chemical vapor deposition are demonstrated as improved active region for visible light emitters. Theoretical studies indicate that InGaN QW with step-function-like In content in the quantum well offers significantly improved radiative recombination rate and optical gain in comparison to the conventional type-I InGaN QW. Experimental results of light emitting diode (LED) structure utilizing staggered InGaN QW show good agreement with theory. Polarization band engineering via staggered InGaN quantum well allows enhancement of radiative recombination rate, leading to the improvement of photoluminescence intensity and LED output power.

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting diodes. The strain-compensated QW structure consists of thin tensile-strained AlGaN barriers surrounding the InGaN QW. The band structure was calculated by using a self-consistent 6-band kmiddotp formalism, taking into account valence band mixing, strain effect, spontaneous and piezoelectric polarizations, as well as the carrier screening effect. The spontaneous emission and gain properties were analyzed for strain-compensated InGaN-AlGaN QW structures with indium contents of 28%, 22%, and 15% for lasers (light-emitting diodes) emitting at 480 (500), 440 (450), and 405 nm (415 nm) spectral regimes, respectively. The spontaneous emission spectra show significant improvement of the radiative emission for strain-compensated QW for all three structures compared to the corresponding conventional InGaN QW, which indicates the enhanced radiative efficiency for light emitting diodes. Our studies show the improvement of the optical gain and reduction of the threshold current density from the use of strain-compensated InGaN-AlGaN QW as active regions for diode lasers.

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

The fabrication studies of silica/polystyrene (PS) colloidal microlens arrays with various aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of colloidal-based microlens arrays led to significant enhancement in light extraction efficiency for III-nitride LEDs. In varying the aspect ratios of the microlens arrays, the engineering of various PS thicknesses was employed by using high-temperature treatment and redeposition process. The effects of PS thickness on the light extraction efficiency and far-field emission patterns of InGaN quantum-well (QW) LEDs were studied. The total output powers of microlens LEDs with various PS thicknesses exhibited 1.93-2.70 times enhancement over that of planar LEDs, and the use of optimized PS layer thickness is important in leading the enhancement of the light extraction efficiency in large angular direction.

http://chaos.cc.lehigh.edu/pubs/Li_XH_Microlens_LEDs_IEEE_Photonics_Journal_June_2011.pdf

Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k  ·  p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24-A In 0.28 Ga 0.72 N–GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24-A In 0.28 Ga 0.72 N QW with 15-A Al 0.1 Ga 0.9 N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15-A Al 0.83 In 0.17 N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm 2 ). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly.

Nelson Tansu

Papers

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes