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Nick Holonyak

Researcher at University of Illinois at Urbana–Champaign

Publications -  550
Citations -  13811

Nick Holonyak is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Laser & Quantum well. The author has an hindex of 52, co-authored 549 publications receiving 13608 citations. Previous affiliations of Nick Holonyak include Urbana University.

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Proceedings ArticleDOI

85°C Operation of 850 nm VCSELs Deliver a 42 Gb/s Error-Free Data Transmission for 100 meter MMF Link

TL;DR: 850nm VCSELs record performance and error-free transmission for a 100 meter MMF link are reported without the use of equalizer or forward error correction.
Journal ArticleDOI

Behavior of carrier lifetime spectra (77 °K) in GaAs1−xPx

TL;DR: In this paper, the dependence of the lifetime spectrum τ (λ) on doping concentration and crystal composition was investigated on direct GaAs1−xPx doped with Te, and it was shown that at high-excitation levels, the carrier lifetime in the neighborhood of laser modes is shortened by stimulated emission.
Journal ArticleDOI

Hydrogenation-defined stripe-geometry in0.5(alxga1-x)0.5p quantum-well lasers

TL;DR: In this article, data were presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In 0.5(AlxGa1−x)0.5P quantum-well heterostructure lasers defined via hydrogenation.
Journal ArticleDOI

High pressure measurements on photopumped low threshold AlxGa1−xAs quantum well lasers

TL;DR: In this paper, the continuous (cw) 300 K photopumped laser operation of a low threshold Alx′Ga1−x′As-GaAs (x′∼0.30) single quantum well heterostructure (quantum well size Lz∼60 A) subjected to high pressure (0-11 kbar) in a simple opposed anvil apparatus is presented.
Journal ArticleDOI

High‐energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳EL, EX)

TL;DR: In this article, it was shown that a small GaAs quantum well (L/sub z/roughly equal 80 A), the middle third of which is replaced with a (Si/sub 2/)/sub x/(GaAs)/sub 1-x/ ''barrier'' (27 A, x> or approx. = 0.2), is capable of stimulated emission (77 K) at energies h..omega..> or approximate.