Nick Holonyak

TL;DR: In this paper, the degree of distortion from cubic is shown to be dependent on the layer thickness and at sufficiently large layer sizes (≳180 A) dislocations are introduced at the interfaces.

TL;DR: In this paper, a method of making a semiconductor device is disclosed and includes the following steps: forming a structure comprising layers of III-V semiconductor material, at least one of the layers being an aluminum-beating III-v semiconducting material, applying metal electrodes (505,565) to the structure to form a medalist semiconductor structure; and heating the medalist structure in a water-containing environment to convert a portion of the aluminum-bearing III-veto material to a native oxide of aluminum (581,582).

TL;DR: In this article, the spectral properties of high quality vapor grown n-type GaAs1-xPx (0.0667⩽ x ⩽ 0.35) for both the low level spontaneous and the high level laser regimes of excitation were measured.

TL;DR: In this article, before and after sample thermal annealing, on AlxGa1−xAs−GaAs quantum-well heterostructures with Se or Mg sheet doping in the barriers or in the quantum wells (QWs).

TL;DR: In this paper, the authors demonstrate continuous (cw) 300 K operation of p−n AlxGa1−xAs−GaAs quantum well heterostructure lasers grown on Si and fabricated with naturally occurring microcracks running parallel to or perpendicular to the laser stripe.