N
Nicolas Camara
Researcher at François Rabelais University
Publications - 66
Citations - 2869
Nicolas Camara is an academic researcher from François Rabelais University. The author has contributed to research in topics: Graphene & Diode. The author has an hindex of 21, co-authored 66 publications receiving 2552 citations. Previous affiliations of Nicolas Camara include Autonomous University of Barcelona & Spanish National Research Council.
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Optical nano-imaging of gate-tunable graphene plasmons
Jianing Chen,Michela Badioli,Pablo Alonso-González,Sukosin Thongrattanasiri,Florian Huth,Johann Osmond,Marko Spasenović,Alba Centeno,Amaia Pesquera,Philippe Godignon,Amaia Zurutuza Elorza,Nicolas Camara,F. Javier García de Abajo,Rainer Hillenbrand,Frank H. L. Koppens +14 more
TL;DR: A successful alliance between nanoelectronics and nano-optics enables the development of active subwavelength-scale optics and a plethora of nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing, and strongly enhanced light–matter interactions for quantum devices and biosensing applications.
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Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC
Nicolas Camara,Jean-Roch Huntzinger,Gemma Rius,Antoine Tiberj,Narcis Mestres,Francesc Pérez-Murano,Philippe Godignon,Jean Camassel +7 more
TL;DR: Using a graphite cap to cover the silicon carbide (SiC) sample, it was shown that large isolated graphene anisotropic ribbons can be grown on the C face of on-axis, semi-insulating, $6H$-SiC wafers as mentioned in this paper.
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Interplay between interferences and electron-electron interactions in epitaxial graphene
Benoit Jouault,Benoit Jouault,B. Jabakhanji,Nicolas Camara,Wilfried Desrat,C. Consejo,Jean Camassel,Jean Camassel +7 more
TL;DR: In this article, the authors separate localization and interaction effects in epitaxial graphene devices grown on the C face of an off-axis 4$H$-SiC substrate by analyzing the low-temperature conductivities.
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Selective epitaxial growth of graphene on SiC
Nicolas Camara,Gemma Rius,Jean-Roch Huntzinger,Antoine Tiberj,Narcis Mestres,Philippe Godignon,Jean Camassel +6 more
TL;DR: In this paper, a method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned silicon carbide (SiC) substrate is presented, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and then, patterning it with e-beam lithography and wet etching.
Journal ArticleDOI
Early stage formation of graphene on the C face of 6H-SiC
Nicolas Camara,Gemma Rius,Jean-Roch Huntzinger,Antoine Tiberj,Laurence Magaud,Narcis Mestres,Philippe Godignon,Jean Camassel +7 more
TL;DR: In this paper, an investigation of the early stage formation of graphene on the C face of 6H-silicon carbide (SiC) is presented, showing that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous.