C
C. Consejo
Researcher at University of Montpellier
Publications - 33
Citations - 429
C. Consejo is an academic researcher from University of Montpellier. The author has contributed to research in topics: Terahertz radiation & Graphene. The author has an hindex of 11, co-authored 33 publications receiving 387 citations. Previous affiliations of C. Consejo include Centre national de la recherche scientifique.
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Journal ArticleDOI
Magnetospectroscopy of two-dimensional HgTe-based topological insulators around the critical thickness
M. S. Zholudev,M. S. Zholudev,Frederic Teppe,Milan Orlita,C. Consejo,Jérémi Torres,Nina Dyakonova,M. Czapkiewicz,Jerzy Wróbel,G. Grabecki,Nikolay N. Mikhailov,S. A. Dvoretskii,A. V. Ikonnikov,K. E. Spirin,Vladimir Ya. Aleshkin,Vladimir I. Gavrilenko,Wojciech Knap +16 more
TL;DR: In this paper, a far-infrared magnetospectroscopy study of a set of HgTe/Cd quantum wells with different thicknesses from below to above the critical value was performed.
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Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
F. Lafont,Rebeca Ribeiro-Palau,Dimitrios Kazazis,Adrien Michon,O. Couturaud,C. Consejo,Thierry Chassagne,Marcin Zielinski,Marc Portail,Benoit Jouault,Félicien Schopfer,W. Poirier +11 more
TL;DR: Graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range, and rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.
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Interplay between interferences and electron-electron interactions in epitaxial graphene
Benoit Jouault,Benoit Jouault,B. Jabakhanji,Nicolas Camara,Wilfried Desrat,C. Consejo,Jean Camassel,Jean Camassel +7 more
TL;DR: In this article, the authors separate localization and interaction effects in epitaxial graphene devices grown on the C face of an off-axis 4$H$-SiC substrate by analyzing the low-temperature conductivities.
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Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
Nicolas Camara,Benoit Jouault,A. Caboni,B. Jabakhanji,Wilfried Desrat,E. Pausas,C. Consejo,N. Mestres,Philippe Godignon,Jean Camassel +9 more
TL;DR: Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown.
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Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC
Benoit Jouault,Nicolas Camara,B. Jabakhanji,A. Caboni,C. Consejo,Philippe Godignon,Duncan K. Maude,Jean Camassel +7 more
TL;DR: In this article, the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate, which is fabricated via the implantation of nitrogen atoms in the SiC crystal.