N
Nils von den Driesch
Researcher at Forschungszentrum Jülich
Publications - 39
Citations - 904
Nils von den Driesch is an academic researcher from Forschungszentrum Jülich. The author has contributed to research in topics: Lasing threshold & Heterojunction. The author has an hindex of 14, co-authored 34 publications receiving 688 citations. Previous affiliations of Nils von den Driesch include RWTH Aachen University.
Papers
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Journal ArticleDOI
Optically Pumped GeSn Microdisk Lasers on Si
Daniela Stange,Stephan Wirths,R. Geiger,C. Schulte-Braucks,Bahareh Marzban,Nils von den Driesch,Gregor Mussler,T. Zabel,Toma Stoica,J. M. Hartmann,Siegfried Mantl,Zoran Ikonic,Detlev Grützmacher,Hans Sigg,Jeremy Witzens,Dan Buca +15 more
TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.
Journal ArticleDOI
Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
Daniela Stange,Nils von den Driesch,Denis Rainko,Søren Roesgaard,Ivan Povstugar,Jean-Michel Hartmann,Toma Stoica,Zoran Ikonic,Siegfried Mantl,Detlev Grützmacher,Dan Buca +10 more
TL;DR: In this article, the authors compare multi-quantum-well (MQW) light-emitting diodes (LEDs) with Ge0.915Sn0.085 wells and Si0.1Ge0.8Sn 0.1 barriers.
Journal ArticleDOI
Tailoring Mechanically Tunable Strain Fields in Graphene
M. Goldsche,M. Goldsche,Jens Sonntag,Jens Sonntag,Tymofiy Khodkov,Tymofiy Khodkov,G.J. Verbiest,Sven Reichardt,Christoph Neumann,Christoph Neumann,Taoufiq Ouaj,Nils von den Driesch,Dan Buca,Christoph Stampfer,Christoph Stampfer +14 more
TL;DR: In this paper, the authors use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4%/μm.
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Low V π Silicon photonics modulators with highly linear epitaxially grown phase shifters
S. Sharif Azadeh,Florian Merget,Sebastian Romero-García,Alvaro Moscoso-Mártir,Nils von den Driesch,Juliana Müller,Siegfried Mantl,Dan Buca,Jeremy Witzens +8 more
TL;DR: Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses.
Journal ArticleDOI
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers.
Nils von den Driesch,Daniela Stange,Denis Rainko,Ivan Povstugar,Peter Zaumseil,Giovanni Capellini,Thomas Schröder,Thibaud Denneulin,Thibaud Denneulin,Zoran Ikonic,Jean-Michel Hartmann,Hans Sigg,Siegfried Mantl,Detlev Grützmacher,Dan Buca +14 more
TL;DR: Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications with the highest potential for efficient next generation complementary metal‐oxide‐semiconductor (CMOS)‐compatible group IV lasers are demonstrated, both in photonics and theoretical calculations.