J. M. Hartmann

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.

TL;DR: In this article, the authors provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths.

TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.

TL;DR: In this article, chemical vapor deposition of direct bandgap GeSn alloys with a high Γ- to L-valley energy separation and large thicknesses for efficient optical mode confinement is presented and discussed.

TL;DR: In this article, the authors investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect and show that the design with multi quantum well reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures.