Bahareh Marzban

TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.

TL;DR: In this article, the authors investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect and show that the design with multi quantum well reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures.

TL;DR: In this article, the authors highlight key strategies to circumvent these hurdles and hopefully bring this material system to maturity to create far-reaching opportunities for Si-compatible infrared photodetectors, sensors, and emitters for applications in free-space communication, infrared harvesting, biological and chemical sensing, and thermal imaging.

TL;DR: In this article, two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator waveguides are presented.

TL;DR: In this article, the authors highlight key strategies to circumvent these hurdles and bring this material system to maturity to create far-reaching new opportunities for Si-compatible infrared photodetectors, sensors, and emitters for applications in free-space communication, infrared harvesting, biological and chemical sensing, and thermal imaging.