Norman F. Prokop

TL;DR: In this article, the fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500degC in air ambient is reported.

TL;DR: In this paper, short-term demonstrations of packaged 4H-SiC junction field effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air are reported, including a 26-transistor 11-stage ring oscillator that functioned at 961 °C ambient temperature.

TL;DR: In this article, the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6HSiC junction field effect transistors (JFETs) was reported.

TL;DR: In this paper, the first stable electrical operation of semiconductor ICs for 1 year (8760 hours) at 500°C in air atmosphere was reported, achieving a more than 7-fold increase in circuit complexity from the 24 transistor ring oscillator ICs reported at HiTEC 2016.

TL;DR: In this article, a prototype 4H-SiC JFET IC was demonstrated without any change/adjustment of input signal levels or power supply voltages, which is expected to simplify infusion of this IC technology into a broader range of beneficial applications.