Olivier Llopis

TL;DR: In this article, the noise properties of pseudomorphic HEMTs were investigated in the low and intermediate frequency range (10 Hz to 150 MHz) and in the microwave range (4 to 18 GHz).

TL;DR: The influence of the source AM noise in microwave residual phase noise experiments is investigated and the noise floor degradation problem, caused by the parasitic detection of this type of noise by an imperfectly balanced mixer, is solved thanks to a refinement of the quadrature condition.

TL;DR: In this paper, an extensive electrical characterization of Si/SiGe/Si heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) is presented.

TL;DR: In this paper, a design methodology for low phase-noise dielectric-resonator oscillators (DRO's) with applications examples at 4 GHz is presented, and three oscillators' configurations have been simulated, realized in discrete elements, and characterized.

TL;DR: In this article, the authors demonstrate the evidence of a predominant contribution of the transistor high-frequency noise in residual phase-noise data, which is observed in devices in which the lowfrequency noise contribution has been carefully minimized through an optimized bias network, and at offsets frequency above 10 kHz.